An energy transport model for HBTs using energy- and composition-dependent transport parameters

Kazushige Horio, Akio Nakatani

Research output: Contribution to journalArticle

Abstract

In this paper, we describe an energy transport simulation method for graded AlGaAs/GaAs HBTs, which uses Al composition-, doping density-, and energy-dependent transport parameters estimated by a Monte Carlo method. For several representative Al composition x and doping densities, parameters such as electron mobility, energy relaxation time and upper valley fraction are evaluated as a function of electron energy. For the other x, these are determined by linear extraporation. The problem of this extraporation method is also described. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those by using more simplified approaches, indicating the importance of using adequate transport parameters.

Original languageEnglish
Pages (from-to)567-577
Number of pages11
JournalCOMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
Volume13
Issue number4
DOIs
Publication statusPublished - 1994 Apr 1

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Heterojunction bipolar transistors
Doping (additives)
Electrons
Electron mobility
Cutoff frequency
Chemical analysis
Relaxation time
Monte Carlo methods

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Applied Mathematics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

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abstract = "In this paper, we describe an energy transport simulation method for graded AlGaAs/GaAs HBTs, which uses Al composition-, doping density-, and energy-dependent transport parameters estimated by a Monte Carlo method. For several representative Al composition x and doping densities, parameters such as electron mobility, energy relaxation time and upper valley fraction are evaluated as a function of electron energy. For the other x, these are determined by linear extraporation. The problem of this extraporation method is also described. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those by using more simplified approaches, indicating the importance of using adequate transport parameters.",
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AB - In this paper, we describe an energy transport simulation method for graded AlGaAs/GaAs HBTs, which uses Al composition-, doping density-, and energy-dependent transport parameters estimated by a Monte Carlo method. For several representative Al composition x and doping densities, parameters such as electron mobility, energy relaxation time and upper valley fraction are evaluated as a function of electron energy. For the other x, these are determined by linear extraporation. The problem of this extraporation method is also described. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those by using more simplified approaches, indicating the importance of using adequate transport parameters.

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