Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

H. Onodera, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PublisherNano Science and Technology Institute
Pages499-502
Number of pages4
Volume2
ISBN (Print)9781482258271
Publication statusPublished - 2014
EventNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC
Duration: 2014 Jun 152014 Jun 18

Other

OtherNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
CityWashington, DC
Period14/6/1514/6/18

Fingerprint

High electron mobility transistors
Electric breakdown
Buffer layers
Electric fields
aluminum gallium nitride

Keywords

  • Breakdown voltage
  • Field plate
  • GaN
  • HEMT
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Onodera, H., Hanawa, H., & Horio, K. (2014). Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (Vol. 2, pp. 499-502). Nano Science and Technology Institute.

Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. / Onodera, H.; Hanawa, H.; Horio, Kazushige.

Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2 Nano Science and Technology Institute, 2014. p. 499-502.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Onodera, H, Hanawa, H & Horio, K 2014, Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. in Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. vol. 2, Nano Science and Technology Institute, pp. 499-502, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, 14/6/15.
Onodera H, Hanawa H, Horio K. Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2. Nano Science and Technology Institute. 2014. p. 499-502
Onodera, H. ; Hanawa, H. ; Horio, Kazushige. / Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2 Nano Science and Technology Institute, 2014. pp. 499-502
@inproceedings{45b2d80651d6483b904afc7a274ae340,
title = "Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs",
abstract = "Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.",
keywords = "Breakdown voltage, Field plate, GaN, HEMT, Two-dimensional analysis",
author = "H. Onodera and H. Hanawa and Kazushige Horio",
year = "2014",
language = "English",
isbn = "9781482258271",
volume = "2",
pages = "499--502",
booktitle = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",
publisher = "Nano Science and Technology Institute",

}

TY - GEN

T1 - Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

AU - Onodera, H.

AU - Hanawa, H.

AU - Horio, Kazushige

PY - 2014

Y1 - 2014

N2 - Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

AB - Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

KW - Breakdown voltage

KW - Field plate

KW - GaN

KW - HEMT

KW - Two-dimensional analysis

UR - http://www.scopus.com/inward/record.url?scp=84907414194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907414194&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907414194

SN - 9781482258271

VL - 2

SP - 499

EP - 502

BT - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

PB - Nano Science and Technology Institute

ER -