@inproceedings{45b2d80651d6483b904afc7a274ae340,
title = "Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs",
abstract = "Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.",
keywords = "Breakdown voltage, Field plate, GaN, HEMT, Two-dimensional analysis",
author = "H. Onodera and H. Hanawa and K. Horio",
year = "2014",
month = jan,
day = "1",
language = "English",
isbn = "9781482258271",
series = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",
publisher = "Nano Science and Technology Institute",
pages = "499--502",
booktitle = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",
note = "Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 ; Conference date: 15-06-2014 Through 18-06-2014",
}