Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Hiraku Onodera; Hideyuki Hanawa; Kazushige Horio

doi:10.1002/pssc.201510155

Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Hiraku Onodera, Hideyuki Hanawa, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

Original language	English
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
DOIs	https://doi.org/10.1002/pssc.201510155
Publication status	Accepted/In press - 2016

Keywords

Breakdown voltage
Field plate
GaN HEMT
Two-dimensional analysis

ASJC Scopus subject areas

Condensed Matter Physics

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keywords = "Breakdown voltage, Field plate, GaN HEMT, Two-dimensional analysis",

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T1 - Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

AU - Onodera, Hiraku

AU - Hanawa, Hideyuki

AU - Horio, Kazushige

PY - 2016

Y1 - 2016

N2 - Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

AB - Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

KW - Breakdown voltage

KW - Field plate

KW - GaN HEMT

KW - Two-dimensional analysis

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JF - Physica Status Solidi C: Conferences

SN - 1862-6351

ER -

Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

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