Abstract
Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| DOIs | |
| Publication status | Accepted/In press - 2016 |
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Keywords
- Breakdown voltage
- Field plate
- GaN HEMT
- Two-dimensional analysis
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs. / Onodera, Hiraku; Hanawa, Hideyuki; Horio, Kazushige.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2016.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs
AU - Onodera, Hiraku
AU - Hanawa, Hideyuki
AU - Horio, Kazushige
PY - 2016
Y1 - 2016
N2 - Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
AB - Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
KW - Breakdown voltage
KW - Field plate
KW - GaN HEMT
KW - Two-dimensional analysis
UR - http://www.scopus.com/inward/record.url?scp=84963743242&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963743242&partnerID=8YFLogxK
U2 - 10.1002/pssc.201510155
DO - 10.1002/pssc.201510155
M3 - Article
AN - SCOPUS:84963743242
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
ER -