Abstract
Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| DOIs | |
| Publication status | Accepted/In press - 2016 |
Keywords
- Breakdown voltage
- Field plate
- GaN HEMT
- Two-dimensional analysis
ASJC Scopus subject areas
- Condensed Matter Physics