Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Hiraku Onodera, Hideyuki Hanawa, Kazushige Horio

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

Original languageEnglish
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Publication statusAccepted/In press - 2016


  • Breakdown voltage
  • Field plate
  • GaN HEMT
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Condensed Matter Physics


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