Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Hiraku Onodera, Hideyuki Hanawa, Kazushige Horio

Research output: Research - peer-reviewArticle

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Abstract

Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

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high electron mobility transistors
breakdown
electrical faults
dimensional analysis
buffers
electric fields

Keywords

  • Breakdown voltage
  • Field plate
  • GaN HEMT
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

@article{723c4e10c1cf4578b025437d51979cc6,
title = "Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs",
abstract = "Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.",
keywords = "Breakdown voltage, Field plate, GaN HEMT, Two-dimensional analysis",
author = "Hiraku Onodera and Hideyuki Hanawa and Kazushige Horio",
year = "2016",
doi = "10.1002/pssc.201510155",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

AU - Onodera,Hiraku

AU - Hanawa,Hideyuki

AU - Horio,Kazushige

PY - 2016

Y1 - 2016

N2 - Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

AB - Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

KW - Breakdown voltage

KW - Field plate

KW - GaN HEMT

KW - Two-dimensional analysis

UR - http://www.scopus.com/inward/record.url?scp=84963743242&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963743242&partnerID=8YFLogxK

U2 - 10.1002/pssc.201510155

DO - 10.1002/pssc.201510155

M3 - Article

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

ER -