Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Kai Nakamura, Hideyuki Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

Original languageEnglish
Title of host publication2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages247-250
Number of pages4
ISBN (Electronic)9781538665022
DOIs
Publication statusPublished - 2018 Nov 27
Event2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States
Duration: 2018 Oct 152018 Oct 17

Other

Other2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
CountryUnited States
CitySan Diego
Period18/10/1518/10/17

Fingerprint

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
breakdown
Electric breakdown
electrical faults
Drain current
dimensional analysis
Permittivity
Electric fields
insulators
permittivity
Electric potential
electric fields
electric potential

Keywords

  • Breakdown voltage
  • GaN
  • HEMT
  • High-k passivation layer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

Cite this

Nakamura, K., Hanawa, H., & Horio, K. (2018). Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp. 247-250). [8551096] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS.2018.8551096

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. / Nakamura, Kai; Hanawa, Hideyuki; Horio, Kazushige.

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 247-250 8551096.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakamura, K, Hanawa, H & Horio, K 2018, Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018., 8551096, Institute of Electrical and Electronics Engineers Inc., pp. 247-250, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, San Diego, United States, 18/10/15. https://doi.org/10.1109/BCICTS.2018.8551096
Nakamura K, Hanawa H, Horio K. Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 247-250. 8551096 https://doi.org/10.1109/BCICTS.2018.8551096
Nakamura, Kai ; Hanawa, Hideyuki ; Horio, Kazushige. / Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 247-250
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