Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Engineering & Materials Science

• Passivation 100%
• High electron mobility transistors 95%
• High-k dielectric 32%
• Electric breakdown 23%
• Drain current 13%
• Permittivity 10%
• Electric fields 9%
• Electric potential 5%

Physics & Astronomy

• high electron mobility transistors 85%
• passivity 76%
• breakdown 64%
• electrical faults 16%
• dimensional analysis 9%
• insulators 6%
• permittivity 5%

Chemical Compounds

• Chemical Passivation 83%
• Breakdown Voltage 30%
• Dielectric Material 18%
• Drain Current 15%
• Electron Mobility 12%
• Nonconductor 11%
• Dielectric Constant 9%
• Electric Field 9%
• Voltage 7%