Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

K. Nakano, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.

Original languageEnglish
Title of host publication2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-134
Number of pages4
ISBN (Electronic)9781538643921
DOIs
Publication statusPublished - 2018 May 1
Event1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China
Duration: 2018 May 162018 May 18

Publication series

Name2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Conference

Conference1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
CountryChina
CityXi'an
Period18/5/1618/5/18

Fingerprint

High electron mobility transistors
Passivation
Electric breakdown
Drain current
Permittivity
Electric fields
aluminum gallium nitride
Electric potential

Keywords

  • breakdown voltage
  • GaN
  • HEMT
  • high-k passivation layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Nakano, K., Hanawa, H., & Horio, K. (2018). Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (pp. 131-134). [8734668] (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2018.8734668

Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. / Nakano, K.; Hanawa, H.; Horio, Kazushige.

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 131-134 8734668 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakano, K, Hanawa, H & Horio, K 2018, Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734668, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Institute of Electrical and Electronics Engineers Inc., pp. 131-134, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Xi'an, China, 18/5/16. https://doi.org/10.1109/WiPDAAsia.2018.8734668
Nakano K, Hanawa H, Horio K. Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 131-134. 8734668. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). https://doi.org/10.1109/WiPDAAsia.2018.8734668
Nakano, K. ; Hanawa, H. ; Horio, Kazushige. / Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 131-134 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).
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