Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Mathematics

• AlGaN 100%
• Passivation 82%
• Breakdown 51%
• Voltage 32%
• Insulator 14%
• Permittivity 12%
• Thin Layer 12%
• Dimensional Analysis 11%
• Electric Field 10%
• Electron 9%

Engineering & Materials Science

• Passivation 58%
• High electron mobility transistors 55%
• Electric breakdown 21%
• High-k dielectric 15%
• Drain current 12%
• Permittivity 9%
• Electric fields 8%
• Electric potential 4%

Chemical Compounds

• Chemical Passivation 48%
• Breakdown Voltage 28%
• Drain Current 14%
• Electron Mobility 11%
• Nonconductor 10%
• Dielectric Constant 8%
• Electric Field 8%
• Dielectric Material 8%
• Voltage 6%