Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

T. Kabemura, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is well known that the introduction of field plate increases the breakdown voltage Vbr of AlGaN/GaN HEMTs. As another way to improve Vbr, using a high-k passivation layer is proposed. So, in this study, we combine the two factors and analyzed the breakdown characteristics of field-plate AlGaN/GaN HEMTs as parameters of its rength LFP and the relative permittivity of passivation layer er. It is shown that the enhancement of Vbr with increasing ϵτ is more significant when LFP is relatively short. There is an optimum value of LFP to obtain the highest Vbr, and it is around 0.2 and 0.3 μm when the gate-to-drain distance is 1.5 μm When LFP = 0.3 μm and ϵτr takes a high value of 50, the electric field between the field-plate edge and the drain becomes rather uniform, and Vbr becomes about 400 V, which corresponds to an effective electric field of 2.7 MV/cm between gate and drain.

Original languageEnglish
Title of host publicationTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
EditorsMatthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
PublisherTechConnect
Pages28-31
Number of pages4
Volume4
ISBN (Electronic)9780998878256
Publication statusPublished - 2018 Jan 1
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
Duration: 2018 May 132018 May 16

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
CountryUnited States
CityAnaheim
Period18/5/1318/5/16

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Keywords

  • Breakdown voltage
  • Field plate
  • GaN HEMT
  • High-k passivation layer

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kabemura, T., Hanawa, H., & Horio, K. (2018). Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. In M. Laudon, F. Case, B. Romanowicz, & F. Case (Eds.), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (Vol. 4, pp. 28-31). TechConnect.