Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer's acceptor density

Shinya Akiyama, Masahiro Kondo, Leona Wada, Kazushige Horio

Research output: Contribution to journalArticle

Abstract

We perform a numerical analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped buffer layer with only a deep acceptor as a deep level and study how its density N DA and the length of field-plate L FP affect the breakdown voltage V br. The calculated characteristics usually show abrupt increases in gate and drain currents due to impact ionization, resulting in breakdown. But, in some cases, V br is limited by current flow through the buffer, and this current is higher for lower N DA. Therefore, V br becomes higher for higher N DA. V br takes a maximum value at some L FP, and the highest average electric field between gate and drain becomes about 3.2 MV cm-1 when the breakdown occurs.

Original languageEnglish
Article number068003
JournalJapanese Journal of Applied Physics
Volume58
Issue number6
DOIs
Publication statusPublished - 2019 Jan 1

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Impact ionization
Drain current
High electron mobility transistors
Buffer layers
high electron mobility transistors
Electric breakdown
electrical faults
Numerical analysis
buffers
breakdown
Electric fields
numerical analysis
high current
ionization
electric fields

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer's acceptor density. / Akiyama, Shinya; Kondo, Masahiro; Wada, Leona; Horio, Kazushige.

In: Japanese Journal of Applied Physics, Vol. 58, No. 6, 068003, 01.01.2019.

Research output: Contribution to journalArticle

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