Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

Hiraku Onodera, Kazushige Horio

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN high electron mobility transistors with a relatively short gate length and short gate-to-drain distances is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that when the acceptor density in the buffer layer is high, the breakdown voltage is determined by the impact ionization of carriers, and it can decrease with increasing the field-plate length. This is because the distance between the field-plate edge and the drain becomes very short and the electric field there becomes very high. On the other hand, when the acceptor density in the buffer layer is relatively low, the buffer leakage current becomes very large and this can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

Original languageEnglish
Article number085016
JournalSemiconductor Science and Technology
Volume27
Issue number8
DOIs
Publication statusPublished - 2012 Aug

Fingerprint

High electron mobility transistors
Buffer layers
high electron mobility transistors
Electric breakdown
Buffers
buffers
breakdown
electrical faults
Impurities
impurities
Impact ionization
Leakage currents
dimensional analysis
Electric fields
leakage
ionization
electric fields
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

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abstract = "The two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN high electron mobility transistors with a relatively short gate length and short gate-to-drain distances is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that when the acceptor density in the buffer layer is high, the breakdown voltage is determined by the impact ionization of carriers, and it can decrease with increasing the field-plate length. This is because the distance between the field-plate edge and the drain becomes very short and the electric field there becomes very high. On the other hand, when the acceptor density in the buffer layer is relatively low, the buffer leakage current becomes very large and this can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.",
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AB - The two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN high electron mobility transistors with a relatively short gate length and short gate-to-drain distances is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that when the acceptor density in the buffer layer is high, the breakdown voltage is determined by the impact ionization of carriers, and it can decrease with increasing the field-plate length. This is because the distance between the field-plate edge and the drain becomes very short and the electric field there becomes very high. On the other hand, when the acceptor density in the buffer layer is relatively low, the buffer leakage current becomes very large and this can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

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