Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

Engineering & Materials Science

• Buffer layers 100%
• High electron mobility transistors 81%
• Electric breakdown 79%
• Impurities 67%
• Impact ionization 36%
• Leakage currents 25%
• Electric fields 21%

Physics & Astronomy

• high electron mobility transistors 72%
• buffers 59%
• breakdown 54%
• electrical faults 51%
• impurities 46%
• dimensional analysis 20%
• leakage 14%
• ionization 12%
• electric fields 10%

Chemical Compounds

• Electron Mobility 83%
• Breakdown Voltage 78%
• Buffer Solution 45%
• Deep Donor 31%
• Length 31%
• Impact Ionization 30%
• Leakage Current 23%
• Electric Field 15%