Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs

H. Takayanagi, H. Nakano, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analyses of GaN MESFETs are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are included. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that so called current collapse or current reduction is more pronounced for a case with higher acceptor density in the buffer layer, because trapping effects become more significant. It is also shown that the current reduction is more pronounced when the drain voltage is lowered from a higher drain bias during turn-on.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages149-152
Number of pages4
Publication statusPublished - 2005 Dec 1
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 2005 Oct 32005 Oct 4

Publication series

NameGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume2005

Conference

ConferenceGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period05/10/305/10/4

ASJC Scopus subject areas

  • Engineering(all)

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    Takayanagi, H., Nakano, H., & Horio, K. (2005). Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (pp. 149-152). [1605116] (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).