Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs

Kazushige Horio, A. Nakajima

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5 Citations (Scopus)

Abstract

Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.

Original languageEnglish
Pages (from-to)1898-1901
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008

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high electron mobility transistors
time lag
buffers
trapping
curves
high voltages
cut-off
field effect transistors
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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abstract = "Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.",
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T1 - Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs

AU - Horio, Kazushige

AU - Nakajima, A.

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N2 - Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.

AB - Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.

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