Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's

Kazushige Horio, Akio Nakatani

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.

Original languageEnglish
Pages (from-to)1897-1902
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume42
Issue number11
DOIs
Publication statusPublished - 1995 Nov

Fingerprint

Heterojunction bipolar transistors
Cutoff frequency
accumulators
aluminum gallium arsenides
Time delay
Degradation
emitters
cut-off
minority carriers
gallium arsenide
time lag
degradation
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

@article{2f3a12980a354546b4640c9cdd9c1a9d,
title = "Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's",
abstract = "Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.",
author = "Kazushige Horio and Akio Nakatani",
year = "1995",
month = "11",
doi = "10.1109/16.469394",
language = "English",
volume = "42",
pages = "1897--1902",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's

AU - Horio, Kazushige

AU - Nakatani, Akio

PY - 1995/11

Y1 - 1995/11

N2 - Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.

AB - Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.

UR - http://www.scopus.com/inward/record.url?scp=0029408398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029408398&partnerID=8YFLogxK

U2 - 10.1109/16.469394

DO - 10.1109/16.469394

M3 - Article

AN - SCOPUS:0029408398

VL - 42

SP - 1897

EP - 1902

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -