Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs

Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)157-160
JournalProceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy
Publication statusPublished - 2002 Sep 1

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