Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs

Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)157-160
JournalProceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy
Publication statusPublished - 2002 Sep 1

Cite this

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title = "Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs",
author = "Y. Mitani and D. Kasai and K. Horio",
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journal = "Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy",

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AU - Horio, K.

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JO - Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy

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