Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs

Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	157-160
Journal	Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy
Publication status	Published - 2002 Sept 1

Cite this

Research output: Contribution to journal › Article › peer-review

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title = "Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs",

author = "Y. Mitani and D. Kasai and K. Horio",

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journal = "Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy",

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AU - Kasai, D.

AU - Horio, K.

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JO - Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy

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