Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs

A. Nakajima, H. Takayanagi, K. Itagaki, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original languageEnglish
Title of host publicationConference Proceedings of the International Symposium on Signals, Systems and Electronics
Pages193-196
Number of pages4
DOIs
Publication statusPublished - 2007
Event2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007 - Montreal, QC
Duration: 2007 Jul 302007 Aug 2

Other

Other2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007
CityMontreal, QC
Period07/7/3007/8/2

Fingerprint

High electron mobility transistors
Buffer layers
Field effect transistors
Electric potential

ASJC Scopus subject areas

  • Signal Processing

Cite this

Nakajima, A., Takayanagi, H., Itagaki, K., & Horio, K. (2007). Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. In Conference Proceedings of the International Symposium on Signals, Systems and Electronics (pp. 193-196). [4294446] https://doi.org/10.1109/ISSSE.2007.4294446

Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. / Nakajima, A.; Takayanagi, H.; Itagaki, K.; Horio, Kazushige.

Conference Proceedings of the International Symposium on Signals, Systems and Electronics. 2007. p. 193-196 4294446.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, A, Takayanagi, H, Itagaki, K & Horio, K 2007, Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. in Conference Proceedings of the International Symposium on Signals, Systems and Electronics., 4294446, pp. 193-196, 2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007, Montreal, QC, 07/7/30. https://doi.org/10.1109/ISSSE.2007.4294446
Nakajima A, Takayanagi H, Itagaki K, Horio K. Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. In Conference Proceedings of the International Symposium on Signals, Systems and Electronics. 2007. p. 193-196. 4294446 https://doi.org/10.1109/ISSSE.2007.4294446
Nakajima, A. ; Takayanagi, H. ; Itagaki, K. ; Horio, Kazushige. / Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. Conference Proceedings of the International Symposium on Signals, Systems and Electronics. 2007. pp. 193-196
@inproceedings{455606c2bd794f35b1f4fb00e8914f56,
title = "Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs",
abstract = "Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.",
author = "A. Nakajima and H. Takayanagi and K. Itagaki and Kazushige Horio",
year = "2007",
doi = "10.1109/ISSSE.2007.4294446",
language = "English",
isbn = "1424414490",
pages = "193--196",
booktitle = "Conference Proceedings of the International Symposium on Signals, Systems and Electronics",

}

TY - GEN

T1 - Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs

AU - Nakajima, A.

AU - Takayanagi, H.

AU - Itagaki, K.

AU - Horio, Kazushige

PY - 2007

Y1 - 2007

N2 - Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

AB - Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

UR - http://www.scopus.com/inward/record.url?scp=47349083647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47349083647&partnerID=8YFLogxK

U2 - 10.1109/ISSSE.2007.4294446

DO - 10.1109/ISSSE.2007.4294446

M3 - Conference contribution

AN - SCOPUS:47349083647

SN - 1424414490

SN - 9781424414499

SP - 193

EP - 196

BT - Conference Proceedings of the International Symposium on Signals, Systems and Electronics

ER -