Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs

A. Nakajima, H. Takayanagi, K. Itagaki, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original languageEnglish
Title of host publication2007 International Symposium on Signals, Systems, and Electronics, URSI ISSSE 2007
Pages193-196
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007 - Montreal, QC, Canada
Duration: 2007 Jul 302007 Aug 2

Publication series

NameConference Proceedings of the International Symposium on Signals, Systems and Electronics

Conference

Conference2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007
CountryCanada
CityMontreal, QC
Period07/7/3007/8/2

    Fingerprint

ASJC Scopus subject areas

  • Signal Processing

Cite this

Nakajima, A., Takayanagi, H., Itagaki, K., & Horio, K. (2007). Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. In 2007 International Symposium on Signals, Systems, and Electronics, URSI ISSSE 2007 (pp. 193-196). [4294446] (Conference Proceedings of the International Symposium on Signals, Systems and Electronics). https://doi.org/10.1109/ISSSE.2007.4294446