Analysis of drain lag and power compression in GaN MESFET

K. Horio, K. Yonemoto

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)567-569
JournalProceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands
Publication statusPublished - 2004 Oct 1

Cite this

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title = "Analysis of drain lag and power compression in GaN MESFET",
author = "K. Horio and K. Yonemoto",
year = "2004",
month = "10",
day = "1",
language = "English",
pages = "567--569",
journal = "Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands",

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T1 - Analysis of drain lag and power compression in GaN MESFET

AU - Horio, K.

AU - Yonemoto, K.

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M3 - Article

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EP - 569

JO - Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands

JF - Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands

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