Analysis of drain lag and power compression in GaN MESFET

K. Horio, K. Yonemoto

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	567-569
Journal	Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands
Publication status	Published - 2004 Oct 1

Cite this

@article{bf9970dddb9d41d29e4d1a3206363f63,

title = "Analysis of drain lag and power compression in GaN MESFET",

author = "K. Horio and K. Yonemoto",

year = "2004",

month = oct,

day = "1",

language = "English",

pages = "567--569",

journal = "Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands",

}

TY - JOUR

T1 - Analysis of drain lag and power compression in GaN MESFET

AU - Horio, K.

AU - Yonemoto, K.

PY - 2004/10/1

Y1 - 2004/10/1

M3 - Article

SP - 567

EP - 569

JO - Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands

JF - Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands

ER -