Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

Kazushige Horio, Atsushi Nakajima, Keiichi Itagaki

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

A two-dimensional transient analysis of field-plate GaN MESFETs and AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. How the existence of a field plate affects buffer-related drain lag, gate lag and current collapse is studied. It is shown that in both MESFET and HEMT, the drain lag is reduced by introducing a field plate because electron injection into the buffer layer is weakened by it, and the buffer-trapping effects are reduced. It is also shown that the field plate could reduce buffer-related current collapse and gate lag in the FETs. The dependence of lag phenomena and current collapse on the field-plate length and on the SiN passivation layer thickness is also studied. The work suggests that in the field-plate structures, there is an optimum thickness of the SiN layer to minimize the buffer-related current collapse and drain lag in GaN MESFETs and AlGaN/GaN HEMTs.

Original languageEnglish
Article number085022
JournalSemiconductor Science and Technology
Volume24
Issue number8
DOIs
Publication statusPublished - 2009

Fingerprint

High electron mobility transistors
high electron mobility transistors
Buffers
time lag
field effect transistors
buffers
Buffer layers
Electron injection
Field effect transistors
Passivation
Transient analysis
Electric potential
passivity
aluminum gallium nitride
trapping
injection
electric potential
curves
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs. / Horio, Kazushige; Nakajima, Atsushi; Itagaki, Keiichi.

In: Semiconductor Science and Technology, Vol. 24, No. 8, 085022, 2009.

Research output: Contribution to journalArticle

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