Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

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21 Citations (Scopus)


GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

Original languageEnglish
Pages (from-to)4780-4783
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number8 B
Publication statusPublished - 1999 Aug 15



  • Contact angle
  • Garnet crystals
  • O plasma
  • Semiconductor
  • Wafer direct bonding

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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