Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

Original languageEnglish
Pages (from-to)4780-4783
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number8 B
Publication statusPublished - 1999 Aug 15
Externally publishedYes

Fingerprint

Garnets
Angle measurement
garnets
Contact angle
wafers
Crystals
crystals
Plasmas
Hydrophilicity
Chemical activation
activation
estimates
water
Water

Keywords

  • Contact angle
  • Garnet crystals
  • O plasma
  • Semiconductor
  • Wafer direct bonding

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. / Yokoi, Hideki; Mizumoto, Tetsuya; Shimizu, Masafumi; Waniishi, Takashi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4780-4783.

Research output: Contribution to journalArticle

Yokoi, Hideki ; Mizumoto, Tetsuya ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, Naoki ; Kaida, Noriaki ; Nakano, Yoshiaki. / Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; Vol. 38, No. 8 B. pp. 4780-4783.
@article{2f8c891be6b741339885666111963a13,
title = "Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals",
abstract = "GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.",
keywords = "Contact angle, Garnet crystals, O plasma, Semiconductor, Wafer direct bonding",
author = "Hideki Yokoi and Tetsuya Mizumoto and Masafumi Shimizu and Takashi Waniishi and Naoki Futakuchi and Noriaki Kaida and Yoshiaki Nakano",
year = "1999",
month = "8",
day = "15",
language = "English",
volume = "38",
pages = "4780--4783",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 B",

}

TY - JOUR

T1 - Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Shimizu, Masafumi

AU - Waniishi, Takashi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

PY - 1999/8/15

Y1 - 1999/8/15

N2 - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

AB - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

KW - Contact angle

KW - Garnet crystals

KW - O plasma

KW - Semiconductor

KW - Wafer direct bonding

UR - http://www.scopus.com/inward/record.url?scp=0033175345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033175345&partnerID=8YFLogxK

M3 - Article

VL - 38

SP - 4780

EP - 4783

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -