Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs

Yoshiki Satoh, Hideyuki Hanawa, Atsushi Nakajima, Kazushige Horio

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.

Original languageEnglish
Article number031002
JournalJapanese Journal of Applied Physics
Volume54
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
buffers
breakdown
Electric breakdown
Leakage currents
electrical faults
Electric fields
Electron injection
leakage
Buffer layers
electric fields
Permittivity
time lag
trapping
Electric potential
permittivity
injection

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs. / Satoh, Yoshiki; Hanawa, Hideyuki; Nakajima, Atsushi; Horio, Kazushige.

In: Japanese Journal of Applied Physics, Vol. 54, No. 3, 031002, 01.03.2015.

Research output: Contribution to journalArticle

@article{af75b413be9c4ae2a77f21776300042d,
title = "Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs",
abstract = "We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.",
author = "Yoshiki Satoh and Hideyuki Hanawa and Atsushi Nakajima and Kazushige Horio",
year = "2015",
month = "3",
day = "1",
doi = "10.7567/JJAP.54.031002",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3",

}

TY - JOUR

T1 - Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs

AU - Satoh, Yoshiki

AU - Hanawa, Hideyuki

AU - Nakajima, Atsushi

AU - Horio, Kazushige

PY - 2015/3/1

Y1 - 2015/3/1

N2 - We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.

AB - We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.

UR - http://www.scopus.com/inward/record.url?scp=84924270092&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84924270092&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.031002

DO - 10.7567/JJAP.54.031002

M3 - Article

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

M1 - 031002

ER -