Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs

Yoshiki Satoh, Hideyuki Hanawa, Atsushi Nakajima, Kazushige Horio

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Abstract

We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.

Original languageEnglish
Article number031002
JournalJapanese Journal of Applied Physics
Volume54
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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