Two-dimensional simulation of backgating effect in a GaAs MESFET is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.
ASJC Scopus subject areas
- Electrical and Electronic Engineering