Analysis of kink-related backgating effect in GaAs MESFET

Kazushige Horio, Kazuoki Usami

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Two-dimensional simulation of backgating effect in a GaAs MESFET is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number6
DOIs
Publication statusPublished - 1995 Jun

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Impact ionization
Substrates
Experiments
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Analysis of kink-related backgating effect in GaAs MESFET. / Horio, Kazushige; Usami, Kazuoki.

In: IEEE Electron Device Letters, Vol. 16, No. 6, 06.1995, p. 277-279.

Research output: Contribution to journalArticle

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