Analysis of kink-related backgating effect in GaAs MESFET

Kazushige Horio, Kazuoki Usami

Research output: Contribution to journalArticle

5 Citations (Scopus)


Two-dimensional simulation of backgating effect in a GaAs MESFET is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 1995 Jun


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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