Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

Naohiro Noda, Ryouhei Tsurumaki, Kazushige Horio

Research output: Research - peer-reviewArticle

  • 3 Citations

Abstract

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

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high electron mobility transistors
time lag
buffers
insulators
trapping
electrons
simulation

Keywords

  • Current collapse
  • Deep acceptor
  • Field plate
  • GaN HEMT

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer",
abstract = "We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.",
keywords = "Current collapse, Deep acceptor, Field plate, GaN HEMT",
author = "Naohiro Noda and Ryouhei Tsurumaki and Kazushige Horio",
year = "2016",
doi = "10.1002/pssc.201510156",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
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T1 - Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

AU - Noda,Naohiro

AU - Tsurumaki,Ryouhei

AU - Horio,Kazushige

PY - 2016

Y1 - 2016

N2 - We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

AB - We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

KW - Current collapse

KW - Deep acceptor

KW - Field plate

KW - GaN HEMT

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