Analysis of lags and current collapse in source-field-plate AlGaN/GaN high-electron-mobility transistors

Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A two-dimensional transient analysis of source-field-plate AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those in the case of gate-field-plate structures. It is shown that the reduction rate of drain lag obtained by introducing a field plate is quantitatively similar between source- and gate-field-plate structures. However, the gate-lag rate is rather higher in the source-field-plate structure because the electric field at the drain edge of the gate is higher in the off state, and hence electron injection into the buffer layer and the resulting trapping effects are more significant. Hence, current collapse is slightly larger in the source-field-plate structure. It is also shown that an optimum SiN passivation layer thickness is required to minimize buffer-related current collapse in source-field-plate AlGaN/GaN HEMTs.

Original languageEnglish
Article number08JN21
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART 2
DOIs
Publication statusPublished - 2013 Aug

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High electron mobility transistors
Buffer layers
high electron mobility transistors
time lag
Electron injection
Passivation
Transient analysis
Electric fields
buffers
passivity
trapping
injection
electric fields
electrons

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Analysis of lags and current collapse in source-field-plate AlGaN/GaN high-electron-mobility transistors. / Hanawa, Hideyuki; Onodera, Hiraku; Horio, Kazushige.

In: Japanese Journal of Applied Physics, Vol. 52, No. 8 PART 2, 08JN21, 08.2013.

Research output: Contribution to journalArticle

@article{b7872538d8e0494496091f0a63705e1c,
title = "Analysis of lags and current collapse in source-field-plate AlGaN/GaN high-electron-mobility transistors",
abstract = "A two-dimensional transient analysis of source-field-plate AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those in the case of gate-field-plate structures. It is shown that the reduction rate of drain lag obtained by introducing a field plate is quantitatively similar between source- and gate-field-plate structures. However, the gate-lag rate is rather higher in the source-field-plate structure because the electric field at the drain edge of the gate is higher in the off state, and hence electron injection into the buffer layer and the resulting trapping effects are more significant. Hence, current collapse is slightly larger in the source-field-plate structure. It is also shown that an optimum SiN passivation layer thickness is required to minimize buffer-related current collapse in source-field-plate AlGaN/GaN HEMTs.",
author = "Hideyuki Hanawa and Hiraku Onodera and Kazushige Horio",
year = "2013",
month = "8",
doi = "10.7567/JJAP.52.08JN21",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 PART 2",

}

TY - JOUR

T1 - Analysis of lags and current collapse in source-field-plate AlGaN/GaN high-electron-mobility transistors

AU - Hanawa, Hideyuki

AU - Onodera, Hiraku

AU - Horio, Kazushige

PY - 2013/8

Y1 - 2013/8

N2 - A two-dimensional transient analysis of source-field-plate AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those in the case of gate-field-plate structures. It is shown that the reduction rate of drain lag obtained by introducing a field plate is quantitatively similar between source- and gate-field-plate structures. However, the gate-lag rate is rather higher in the source-field-plate structure because the electric field at the drain edge of the gate is higher in the off state, and hence electron injection into the buffer layer and the resulting trapping effects are more significant. Hence, current collapse is slightly larger in the source-field-plate structure. It is also shown that an optimum SiN passivation layer thickness is required to minimize buffer-related current collapse in source-field-plate AlGaN/GaN HEMTs.

AB - A two-dimensional transient analysis of source-field-plate AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those in the case of gate-field-plate structures. It is shown that the reduction rate of drain lag obtained by introducing a field plate is quantitatively similar between source- and gate-field-plate structures. However, the gate-lag rate is rather higher in the source-field-plate structure because the electric field at the drain edge of the gate is higher in the off state, and hence electron injection into the buffer layer and the resulting trapping effects are more significant. Hence, current collapse is slightly larger in the source-field-plate structure. It is also shown that an optimum SiN passivation layer thickness is required to minimize buffer-related current collapse in source-field-plate AlGaN/GaN HEMTs.

UR - http://www.scopus.com/inward/record.url?scp=84883188460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883188460&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.08JN21

DO - 10.7567/JJAP.52.08JN21

M3 - Article

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 2

M1 - 08JN21

ER -