Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs

K. Horio, K. Itagaki, A. Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer, and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown that in both FETs, the power slump could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the power slump.

Original languageEnglish
Title of host publication2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Pages893-896
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 11
Event2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing, China
Duration: 2008 Apr 212008 Apr 24

Publication series

Name2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Volume2

Conference

Conference2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
CountryChina
CityNanjing
Period08/4/2108/4/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

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    Horio, K., Itagaki, K., & Nakajima, A. (2008). Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs. In 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT (pp. 893-896). [4540548] (2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT; Vol. 2). https://doi.org/10.1109/ICMMT.2008.4540548