TY - GEN
T1 - Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs
AU - Horio, K.
AU - Itagaki, K.
AU - Nakajima, A.
PY - 2008
Y1 - 2008
N2 - Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer, and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown that in both FETs, the power slump could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the power slump.
AB - Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer, and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown that in both FETs, the power slump could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the power slump.
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U2 - 10.1109/ICMMT.2008.4540548
DO - 10.1109/ICMMT.2008.4540548
M3 - Conference contribution
AN - SCOPUS:51149097396
SN - 9781424418794
T3 - 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
SP - 893
EP - 896
BT - 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
T2 - 2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
Y2 - 21 April 2008 through 24 April 2008
ER -