Analysis of pulsed I-V curves and power slump in gaas and gan fets

Y. Kazami, D. Kasai, K. Yonemoto, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Turn-on characteristics of GaAs MESFETs are simulated in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the turn-on characteristics, indicating that so-called power slump could occur both due to substrate traps and due to surface states. Transient simulations of GaN MESFETs are also performed in which deep levels in a semi-insulating buffer layer are considered. So-called drain lag is shown to arise as in GaAs MESFETs. It is also shown that the power slump in GaN MESFETs could occur due to deep levels in the semi-insulating buffer layer.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsC. Claeys, J.W. Swart, N.I. Morimoto, P. Verdonck
Pages46-53
Number of pages8
VolumePV 2005-08
Publication statusPublished - 2005
Event20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 - Florianopolis
Duration: 2005 Sep 42005 Sep 7

Other

Other20th Symposium on Microelectronics Technology and Devices, SBMicro 2005
CityFlorianopolis
Period05/9/405/9/7

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Surface states
Buffer layers
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kazami, Y., Kasai, D., Yonemoto, K., & Horio, K. (2005). Analysis of pulsed I-V curves and power slump in gaas and gan fets. In C. Claeys, J. W. Swart, N. I. Morimoto, & P. Verdonck (Eds.), Proceedings - Electrochemical Society (Vol. PV 2005-08, pp. 46-53)

Analysis of pulsed I-V curves and power slump in gaas and gan fets. / Kazami, Y.; Kasai, D.; Yonemoto, K.; Horio, Kazushige.

Proceedings - Electrochemical Society. ed. / C. Claeys; J.W. Swart; N.I. Morimoto; P. Verdonck. Vol. PV 2005-08 2005. p. 46-53.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kazami, Y, Kasai, D, Yonemoto, K & Horio, K 2005, Analysis of pulsed I-V curves and power slump in gaas and gan fets. in C Claeys, JW Swart, NI Morimoto & P Verdonck (eds), Proceedings - Electrochemical Society. vol. PV 2005-08, pp. 46-53, 20th Symposium on Microelectronics Technology and Devices, SBMicro 2005, Florianopolis, 05/9/4.
Kazami Y, Kasai D, Yonemoto K, Horio K. Analysis of pulsed I-V curves and power slump in gaas and gan fets. In Claeys C, Swart JW, Morimoto NI, Verdonck P, editors, Proceedings - Electrochemical Society. Vol. PV 2005-08. 2005. p. 46-53
Kazami, Y. ; Kasai, D. ; Yonemoto, K. ; Horio, Kazushige. / Analysis of pulsed I-V curves and power slump in gaas and gan fets. Proceedings - Electrochemical Society. editor / C. Claeys ; J.W. Swart ; N.I. Morimoto ; P. Verdonck. Vol. PV 2005-08 2005. pp. 46-53
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