Analysis of removal of surface-state-related lags and current slump in GaAs FETs

H. Hafiz; Masatoshi Kumeno; Kazushige Horio

doi:10.1109/LED.2013.2279833

Analysis of removal of surface-state-related lags and current slump in GaAs FETs

H. Hafiz, Masatoshi Kumeno, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO₂ passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO₂ layer.

Original language	English
Article number	6603270
Pages (from-to)	1361-1363
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/LED.2013.2279833
Publication status	Published - 2013 Nov 13

Keywords

2-D analysis
GaAs field effect transistor (FET)
current slump
drain lag
gate lag
surface state

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2279833

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abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.",

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AU - Hafiz, H.

AU - Kumeno, Masatoshi

AU - Horio, Kazushige

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Y1 - 2013/11/13

N2 - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.

AB - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.

KW - 2-D analysis

KW - GaAs field effect transistor (FET)

KW - current slump

KW - drain lag

KW - gate lag

KW - surface state

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Analysis of removal of surface-state-related lags and current slump in GaAs FETs

Abstract

Keywords

ASJC Scopus subject areas

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