Abstract
Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.
| Original language | English |
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| Pages | 327-330 |
| Number of pages | 4 |
| Publication status | Published - 1999 Jan 1 |
| Event | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: 1998 Jun 1 → 1998 Jun 5 |
Other
| Other | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) |
|---|---|
| City | Berkeley, CA, USA |
| Period | 98/6/1 → 98/6/5 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Horio, K., Wakabayashi, A., Otsuka, S., & Yamada, T. (1999). Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. 327-330. Paper presented at Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), Berkeley, CA, USA, .