Abstract
Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.
| Original language | English |
|---|---|
| Title of host publication | IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 327-330 |
| Number of pages | 4 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: 1998 Jun 1 → 1998 Jun 5 |
Other
| Other | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) |
|---|---|
| City | Berkeley, CA, USA |
| Period | 98/6/1 → 98/6/5 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. / Horio, Kazushige; Wakabayashi, A.; Otsuka, S.; Yamada, T.
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Piscataway, NJ, United States : IEEE, 1999. p. 327-330.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs
AU - Horio, Kazushige
AU - Wakabayashi, A.
AU - Otsuka, S.
AU - Yamada, T.
PY - 1999
Y1 - 1999
N2 - Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.
AB - Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.
UR - http://www.scopus.com/inward/record.url?scp=0032598490&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032598490&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0032598490
SP - 327
EP - 330
BT - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
PB - IEEE
CY - Piscataway, NJ, United States
ER -