Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, S. Otsuka, T. Yamada

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages327-330
Number of pages4
Publication statusPublished - 1999
EventProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA
Duration: 1998 Jun 11998 Jun 5

Other

OtherProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
CityBerkeley, CA, USA
Period98/6/198/6/5

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Substrates
Surface states
Electrons
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horio, K., Wakabayashi, A., Otsuka, S., & Yamada, T. (1999). Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 327-330). Piscataway, NJ, United States: IEEE.

Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. / Horio, Kazushige; Wakabayashi, A.; Otsuka, S.; Yamada, T.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Piscataway, NJ, United States : IEEE, 1999. p. 327-330.

Research output: Chapter in Book/Report/Conference proceedingChapter

Horio, K, Wakabayashi, A, Otsuka, S & Yamada, T 1999, Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. IEEE, Piscataway, NJ, United States, pp. 327-330, Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), Berkeley, CA, USA, 98/6/1.
Horio K, Wakabayashi A, Otsuka S, Yamada T. Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Piscataway, NJ, United States: IEEE. 1999. p. 327-330
Horio, Kazushige ; Wakabayashi, A. ; Otsuka, S. ; Yamada, T. / Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Piscataway, NJ, United States : IEEE, 1999. pp. 327-330
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