Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi, S. Otsuka, T. Yamada

Research output: Contribution to conferencePaper

Abstract

Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.

Original languageEnglish
Pages327-330
Number of pages4
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA
Duration: 1998 Jun 11998 Jun 5

Other

OtherProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
CityBerkeley, CA, USA
Period98/6/198/6/5

ASJC Scopus subject areas

  • Engineering(all)

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    Horio, K., Wakabayashi, A., Otsuka, S., & Yamada, T. (1999). Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs. 327-330. Paper presented at Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), Berkeley, CA, USA, .