Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

K. Horio, T. Yamada

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

Original languageEnglish
Pages175-178
Number of pages4
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 1996 Nov 31996 Nov 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period96/11/396/11/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Horio, K., & Yamada, T. (1996). Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. 175-178. Paper presented at Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, .