Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

Kazushige Horio, T. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages175-178
Number of pages4
Publication statusPublished - 1996
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 1996 Nov 31996 Nov 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period96/11/396/11/6

Fingerprint

Surface states
Electron traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Horio, K., & Yamada, T. (1996). Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 175-178). Piscataway, NJ, United States: IEEE.

Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. / Horio, Kazushige; Yamada, T.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). ed. / Anon. Piscataway, NJ, United States : IEEE, 1996. p. 175-178.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K & Yamada, T 1996, Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. in Anon (ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, Piscataway, NJ, United States, pp. 175-178, Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, 96/11/3.
Horio K, Yamada T. Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. In Anon, editor, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States: IEEE. 1996. p. 175-178
Horio, Kazushige ; Yamada, T. / Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). editor / Anon. Piscataway, NJ, United States : IEEE, 1996. pp. 175-178
@inproceedings{425c45a442a34f0f90be021776d58d95,
title = "Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs",
abstract = "Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.",
author = "Kazushige Horio and T. Yamada",
year = "1996",
language = "English",
pages = "175--178",
editor = "Anon",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "IEEE",

}

TY - GEN

T1 - Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

AU - Horio, Kazushige

AU - Yamada, T.

PY - 1996

Y1 - 1996

N2 - Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

AB - Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

UR - http://www.scopus.com/inward/record.url?scp=0030393436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030393436&partnerID=8YFLogxK

M3 - Conference contribution

SP - 175

EP - 178

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

ER -