Abstract
Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.
| Original language | English |
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| Pages | 175-178 |
| Number of pages | 4 |
| Publication status | Published - 1996 Dec 1 |
| Event | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA Duration: 1996 Nov 3 → 1996 Nov 6 |
Other
| Other | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
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| City | Orlando, FL, USA |
| Period | 96/11/3 → 96/11/6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering