Abstract
Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
| Original language | English |
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| Title of host publication | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
| Publisher | IEEE |
| Pages | 167-170 |
| Number of pages | 4 |
| ISBN (Print) | 0780355865 |
| Publication status | Published - 1999 Dec 1 |
| Event | Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA Duration: 1999 Oct 17 → 1999 Oct 20 |
Publication series
| Name | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
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Other
| Other | Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) |
|---|---|
| City | Monterey, CA, USA |
| Period | 99/10/17 → 99/10/20 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Horio, K., & Wakabayashi, A. (1999). Analysis of surface-related kink phenomena of GaAs MESFETs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 167-170). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). IEEE.