Analysis of surface-related kink phenomena of GaAs MESFETs

K. Horio, A. Wakabayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherIEEE
Pages167-170
Number of pages4
ISBN (Print)0780355865
Publication statusPublished - 1999 Dec 1
EventProceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA
Duration: 1999 Oct 171999 Oct 20

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

OtherProceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CityMonterey, CA, USA
Period99/10/1799/10/20

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Horio, K., & Wakabayashi, A. (1999). Analysis of surface-related kink phenomena of GaAs MESFETs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 167-170). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). IEEE.