Abstract
Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 167-170 |
| Number of pages | 4 |
| ISBN (Print) | 0780355865 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA Duration: 1999 Oct 17 → 1999 Oct 20 |
Other
| Other | Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) |
|---|---|
| City | Monterey, CA, USA |
| Period | 99/10/17 → 99/10/20 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Analysis of surface-related kink phenomena of GaAs MESFETs. / Horio, Kazushige; Wakabayashi, A.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States : IEEE, 1999. p. 167-170.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Analysis of surface-related kink phenomena of GaAs MESFETs
AU - Horio, Kazushige
AU - Wakabayashi, A.
PY - 1999
Y1 - 1999
N2 - Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
AB - Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
UR - http://www.scopus.com/inward/record.url?scp=0033345314&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033345314&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0780355865
SP - 167
EP - 170
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PB - IEEE
CY - Piscataway, NJ, United States
ER -