Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs

Yasutaka Mitani, Daisuke Kasai, Kazushige Horio

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly recessed gate structure. Effects of impact ionization on gate-lag phenomena in GaAs MESFETs are also studied. It is shown that the gate-lag becomes weaker when including the impact ionization. This is attributed to the fact that the potential profiles along the surface are drastically changed when the surface states capture generated carriers. It is suggested that there is a tradeoff relationship between raising the breakdown voltage and reducing the gate-lag.

Original languageEnglish
Pages (from-to)285-291
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume50
Issue number2
DOIs
Publication statusPublished - 2003 Feb

Fingerprint

Impact ionization
Surface states
Field effect transistors
time lag
field effect transistors
breakdown
Electric breakdown
ionization
electrical faults
recesses
tradeoffs
gallium arsenide
profiles

Keywords

  • Breakdown
  • GaAs MESFET
  • Gate-lag
  • Impact ionization
  • Recessed-gate structure
  • Surface state

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

@article{22b0c99f359840b8ad68217e6e7be362,
title = "Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs",
abstract = "Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly recessed gate structure. Effects of impact ionization on gate-lag phenomena in GaAs MESFETs are also studied. It is shown that the gate-lag becomes weaker when including the impact ionization. This is attributed to the fact that the potential profiles along the surface are drastically changed when the surface states capture generated carriers. It is suggested that there is a tradeoff relationship between raising the breakdown voltage and reducing the gate-lag.",
keywords = "Breakdown, GaAs MESFET, Gate-lag, Impact ionization, Recessed-gate structure, Surface state",
author = "Yasutaka Mitani and Daisuke Kasai and Kazushige Horio",
year = "2003",
month = "2",
doi = "10.1109/TED.2003.809039",
language = "English",
volume = "50",
pages = "285--291",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs

AU - Mitani, Yasutaka

AU - Kasai, Daisuke

AU - Horio, Kazushige

PY - 2003/2

Y1 - 2003/2

N2 - Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly recessed gate structure. Effects of impact ionization on gate-lag phenomena in GaAs MESFETs are also studied. It is shown that the gate-lag becomes weaker when including the impact ionization. This is attributed to the fact that the potential profiles along the surface are drastically changed when the surface states capture generated carriers. It is suggested that there is a tradeoff relationship between raising the breakdown voltage and reducing the gate-lag.

AB - Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly recessed gate structure. Effects of impact ionization on gate-lag phenomena in GaAs MESFETs are also studied. It is shown that the gate-lag becomes weaker when including the impact ionization. This is attributed to the fact that the potential profiles along the surface are drastically changed when the surface states capture generated carriers. It is suggested that there is a tradeoff relationship between raising the breakdown voltage and reducing the gate-lag.

KW - Breakdown

KW - GaAs MESFET

KW - Gate-lag

KW - Impact ionization

KW - Recessed-gate structure

KW - Surface state

UR - http://www.scopus.com/inward/record.url?scp=0038733741&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038733741&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.809039

DO - 10.1109/TED.2003.809039

M3 - Article

VL - 50

SP - 285

EP - 291

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -