Analysis of terahertz oscillator using negative differential resistance dual-channel transistor and integrated antenna

Katsumi Furuya, Osamu Numakami, Nozomi Yagi, Souichirou Hori, Takeyoshi Sugaya, Kazuhiro Komori, Masahiko Mori, Yoshinobu Okano, Hitoshi Muguruma, Masahiro Asada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The terahertz (THz) band ranges from 100GHz to 10 THz generally. For easy available of the applications, for example, an imaging system and an indoor wireless communication system using this band, an ultrahigh-frequency oscillator device as a wave source with a frequency of one or a few hundred GHz using the negative differential resistance dual-channel transistor (NDR-DCT) proposed by National Institute of Advanced Industrial Science and Technology (AIST) has been studied. The equivalent circuit model of NDR-DCT was based on the measured device properties and analogy with resonant tunnelling diodes (RTDs). It was shown that an antenna on an wafer, which consists of the electrodes of the transistor, could be realized with the slit reflector by numerical analysis. In this study, we simulated and confirmed the validity of our design of the antenna at any frequencies up to a few hundred GHz. The oscillation frequency of this device was analyzed at 150GHz and more mainly by specifying the dependence of NDR-DCT characteristics on the gate length for the first time. Improvements in the characteristics of the oscillation device using the optimum gate length were shown.

Original languageEnglish
Article number04C146
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr

Fingerprint

Transistors
transistors
antennas
oscillators
Antennas
Resonant tunneling diodes
oscillations
resonant tunneling diodes
wireless communication
ultrahigh frequencies
equivalent circuits
Equivalent circuits
Imaging systems
reflectors
numerical analysis
slits
telecommunication
Numerical analysis
Communication systems
wafers

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Analysis of terahertz oscillator using negative differential resistance dual-channel transistor and integrated antenna. / Furuya, Katsumi; Numakami, Osamu; Yagi, Nozomi; Hori, Souichirou; Sugaya, Takeyoshi; Komori, Kazuhiro; Mori, Masahiko; Okano, Yoshinobu; Muguruma, Hitoshi; Asada, Masahiro.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C146, 04.2009.

Research output: Contribution to journalArticle

Furuya, K, Numakami, O, Yagi, N, Hori, S, Sugaya, T, Komori, K, Mori, M, Okano, Y, Muguruma, H & Asada, M 2009, 'Analysis of terahertz oscillator using negative differential resistance dual-channel transistor and integrated antenna', Japanese Journal of Applied Physics, vol. 48, no. 4 PART 2, 04C146. https://doi.org/10.1143/JJAP.48.04C146
Furuya, Katsumi ; Numakami, Osamu ; Yagi, Nozomi ; Hori, Souichirou ; Sugaya, Takeyoshi ; Komori, Kazuhiro ; Mori, Masahiko ; Okano, Yoshinobu ; Muguruma, Hitoshi ; Asada, Masahiro. / Analysis of terahertz oscillator using negative differential resistance dual-channel transistor and integrated antenna. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
@article{212eb980a4654259a3885e9e751b2fc4,
title = "Analysis of terahertz oscillator using negative differential resistance dual-channel transistor and integrated antenna",
abstract = "The terahertz (THz) band ranges from 100GHz to 10 THz generally. For easy available of the applications, for example, an imaging system and an indoor wireless communication system using this band, an ultrahigh-frequency oscillator device as a wave source with a frequency of one or a few hundred GHz using the negative differential resistance dual-channel transistor (NDR-DCT) proposed by National Institute of Advanced Industrial Science and Technology (AIST) has been studied. The equivalent circuit model of NDR-DCT was based on the measured device properties and analogy with resonant tunnelling diodes (RTDs). It was shown that an antenna on an wafer, which consists of the electrodes of the transistor, could be realized with the slit reflector by numerical analysis. In this study, we simulated and confirmed the validity of our design of the antenna at any frequencies up to a few hundred GHz. The oscillation frequency of this device was analyzed at 150GHz and more mainly by specifying the dependence of NDR-DCT characteristics on the gate length for the first time. Improvements in the characteristics of the oscillation device using the optimum gate length were shown.",
author = "Katsumi Furuya and Osamu Numakami and Nozomi Yagi and Souichirou Hori and Takeyoshi Sugaya and Kazuhiro Komori and Masahiko Mori and Yoshinobu Okano and Hitoshi Muguruma and Masahiro Asada",
year = "2009",
month = "4",
doi = "10.1143/JJAP.48.04C146",
language = "English",
volume = "48",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 PART 2",

}

TY - JOUR

T1 - Analysis of terahertz oscillator using negative differential resistance dual-channel transistor and integrated antenna

AU - Furuya, Katsumi

AU - Numakami, Osamu

AU - Yagi, Nozomi

AU - Hori, Souichirou

AU - Sugaya, Takeyoshi

AU - Komori, Kazuhiro

AU - Mori, Masahiko

AU - Okano, Yoshinobu

AU - Muguruma, Hitoshi

AU - Asada, Masahiro

PY - 2009/4

Y1 - 2009/4

N2 - The terahertz (THz) band ranges from 100GHz to 10 THz generally. For easy available of the applications, for example, an imaging system and an indoor wireless communication system using this band, an ultrahigh-frequency oscillator device as a wave source with a frequency of one or a few hundred GHz using the negative differential resistance dual-channel transistor (NDR-DCT) proposed by National Institute of Advanced Industrial Science and Technology (AIST) has been studied. The equivalent circuit model of NDR-DCT was based on the measured device properties and analogy with resonant tunnelling diodes (RTDs). It was shown that an antenna on an wafer, which consists of the electrodes of the transistor, could be realized with the slit reflector by numerical analysis. In this study, we simulated and confirmed the validity of our design of the antenna at any frequencies up to a few hundred GHz. The oscillation frequency of this device was analyzed at 150GHz and more mainly by specifying the dependence of NDR-DCT characteristics on the gate length for the first time. Improvements in the characteristics of the oscillation device using the optimum gate length were shown.

AB - The terahertz (THz) band ranges from 100GHz to 10 THz generally. For easy available of the applications, for example, an imaging system and an indoor wireless communication system using this band, an ultrahigh-frequency oscillator device as a wave source with a frequency of one or a few hundred GHz using the negative differential resistance dual-channel transistor (NDR-DCT) proposed by National Institute of Advanced Industrial Science and Technology (AIST) has been studied. The equivalent circuit model of NDR-DCT was based on the measured device properties and analogy with resonant tunnelling diodes (RTDs). It was shown that an antenna on an wafer, which consists of the electrodes of the transistor, could be realized with the slit reflector by numerical analysis. In this study, we simulated and confirmed the validity of our design of the antenna at any frequencies up to a few hundred GHz. The oscillation frequency of this device was analyzed at 150GHz and more mainly by specifying the dependence of NDR-DCT characteristics on the gate length for the first time. Improvements in the characteristics of the oscillation device using the optimum gate length were shown.

UR - http://www.scopus.com/inward/record.url?scp=77952467918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952467918&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.04C146

DO - 10.1143/JJAP.48.04C146

M3 - Article

AN - SCOPUS:77952467918

VL - 48

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

M1 - 04C146

ER -