Analysis of trap-parameter dependence of lag phenomena and current collapse in GaN FETs

H. Takayanagi, H. Nakano, K. Itagaki, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1062-1063
JournalExtended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan
Publication statusPublished - 2005 Sep 15

Cite this

@article{42f03f9df6754acea3fce6c72c2567cb,
title = "Analysis of trap-parameter dependence of lag phenomena and current collapse in GaN FETs",
author = "H. Takayanagi and H. Nakano and K. Itagaki and K. Horio",
year = "2005",
month = "9",
day = "15",
language = "English",
pages = "1062--1063",
journal = "Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan",

}

TY - JOUR

T1 - Analysis of trap-parameter dependence of lag phenomena and current collapse in GaN FETs

AU - Takayanagi, H.

AU - Nakano, H.

AU - Itagaki, K.

AU - Horio, K.

PY - 2005/9/15

Y1 - 2005/9/15

M3 - Article

SP - 1062

EP - 1063

JO - Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan

JF - Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan

ER -