Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, Y. Mitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
Volume2000-January
ISBN (Print)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 2000 Jul 32000 Jul 7

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period00/7/300/7/7

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Keywords

  • Electron traps
  • Energy states
  • Gallium arsenide
  • Impact ionization
  • MESFETs
  • Poisson equations
  • Steady-state
  • Surface treatment
  • Systems engineering and theory
  • Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Horio, K., Wakabayashi, A., & Mitani, Y. (2000). Analysis of trap-related kink dynamics in GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (Vol. 2000-January, pp. 337-340). [939256] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIM.2000.939256