Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, Y. Mitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
Volume2000-January
ISBN (Print)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 2000 Jul 32000 Jul 7

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period00/7/300/7/7

Fingerprint

Surface states
field effect transistors
traps
Impact ionization
trapping
ionization
output
Computer simulation
Electric potential
electric potential
Substrates
gallium arsenide
simulation

Keywords

  • Electron traps
  • Energy states
  • Gallium arsenide
  • Impact ionization
  • MESFETs
  • Poisson equations
  • Steady-state
  • Surface treatment
  • Systems engineering and theory
  • Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Horio, K., Wakabayashi, A., & Mitani, Y. (2000). Analysis of trap-related kink dynamics in GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (Vol. 2000-January, pp. 337-340). [939256] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIM.2000.939256

Analysis of trap-related kink dynamics in GaAs MESFETs. / Horio, Kazushige; Wakabayashi, A.; Mitani, Y.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 337-340 939256.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K, Wakabayashi, A & Mitani, Y 2000, Analysis of trap-related kink dynamics in GaAs MESFETs. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. vol. 2000-January, 939256, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 00/7/3. https://doi.org/10.1109/SIM.2000.939256
Horio K, Wakabayashi A, Mitani Y. Analysis of trap-related kink dynamics in GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 337-340. 939256 https://doi.org/10.1109/SIM.2000.939256
Horio, Kazushige ; Wakabayashi, A. ; Mitani, Y. / Analysis of trap-related kink dynamics in GaAs MESFETs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 337-340
@inproceedings{bd0161f3ddcf49e0b61e0c35783e043e,
title = "Analysis of trap-related kink dynamics in GaAs MESFETs",
abstract = "Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.",
keywords = "Electron traps, Energy states, Gallium arsenide, Impact ionization, MESFETs, Poisson equations, Steady-state, Surface treatment, Systems engineering and theory, Voltage",
author = "Kazushige Horio and A. Wakabayashi and Y. Mitani",
year = "2000",
doi = "10.1109/SIM.2000.939256",
language = "English",
isbn = "0780358147",
volume = "2000-January",
pages = "337--340",
booktitle = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Analysis of trap-related kink dynamics in GaAs MESFETs

AU - Horio, Kazushige

AU - Wakabayashi, A.

AU - Mitani, Y.

PY - 2000

Y1 - 2000

N2 - Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

AB - Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

KW - Electron traps

KW - Energy states

KW - Gallium arsenide

KW - Impact ionization

KW - MESFETs

KW - Poisson equations

KW - Steady-state

KW - Surface treatment

KW - Systems engineering and theory

KW - Voltage

UR - http://www.scopus.com/inward/record.url?scp=84950112905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950112905&partnerID=8YFLogxK

U2 - 10.1109/SIM.2000.939256

DO - 10.1109/SIM.2000.939256

M3 - Conference contribution

AN - SCOPUS:84950112905

SN - 0780358147

VL - 2000-January

SP - 337

EP - 340

BT - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -