Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, Y. Mitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)0780358147
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 2000 Jul 32000 Jul 7


Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000


  • Electron traps
  • Energy states
  • Gallium arsenide
  • Impact ionization
  • Poisson equations
  • Steady-state
  • Surface treatment
  • Systems engineering and theory
  • Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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