Anisotropic electrical transport in MgB2 single crystals

Yu Eltsev, K. Nakao, S. Lee, T. Masui, N. Chikumoto, S. Tajima, N. Koshizuka, M. Murakami

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3 Citations (Scopus)

Abstract

We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

Original languageEnglish
Pages (from-to)1069-1073
Number of pages5
JournalJournal of Low Temperature Physics
Volume131
Issue number5-6
DOIs
Publication statusPublished - 2003 Jun

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Eltsev, Y., Nakao, K., Lee, S., Masui, T., Chikumoto, N., Tajima, S., Koshizuka, N., & Murakami, M. (2003). Anisotropic electrical transport in MgB2 single crystals. Journal of Low Temperature Physics, 131(5-6), 1069-1073. https://doi.org/10.1023/A:1023496909278