Anisotropic electrical transport in MgB2 single crystals

Yu Eltsev, K. Nakao, S. Lee, T. Masui, N. Chikumoto, S. Tajima, N. Koshizuka, Masato Murakami

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

Original languageEnglish
Pages (from-to)1069-1074
Number of pages6
JournalJournal of Low Temperature Physics
Volume131
Issue number5-6
DOIs
Publication statusPublished - 2003 Jun
Externally publishedYes

Fingerprint

Hall effect
Band structure
Transport properties
Single crystals
electrical resistivity
single crystals
transport properties
exponents
anomalies

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Eltsev, Y., Nakao, K., Lee, S., Masui, T., Chikumoto, N., Tajima, S., ... Murakami, M. (2003). Anisotropic electrical transport in MgB2 single crystals. Journal of Low Temperature Physics, 131(5-6), 1069-1074. https://doi.org/10.1023/A:1023496909278

Anisotropic electrical transport in MgB2 single crystals. / Eltsev, Yu; Nakao, K.; Lee, S.; Masui, T.; Chikumoto, N.; Tajima, S.; Koshizuka, N.; Murakami, Masato.

In: Journal of Low Temperature Physics, Vol. 131, No. 5-6, 06.2003, p. 1069-1074.

Research output: Contribution to journalArticle

Eltsev, Y, Nakao, K, Lee, S, Masui, T, Chikumoto, N, Tajima, S, Koshizuka, N & Murakami, M 2003, 'Anisotropic electrical transport in MgB2 single crystals', Journal of Low Temperature Physics, vol. 131, no. 5-6, pp. 1069-1074. https://doi.org/10.1023/A:1023496909278
Eltsev Y, Nakao K, Lee S, Masui T, Chikumoto N, Tajima S et al. Anisotropic electrical transport in MgB2 single crystals. Journal of Low Temperature Physics. 2003 Jun;131(5-6):1069-1074. https://doi.org/10.1023/A:1023496909278
Eltsev, Yu ; Nakao, K. ; Lee, S. ; Masui, T. ; Chikumoto, N. ; Tajima, S. ; Koshizuka, N. ; Murakami, Masato. / Anisotropic electrical transport in MgB2 single crystals. In: Journal of Low Temperature Physics. 2003 ; Vol. 131, No. 5-6. pp. 1069-1074.
@article{1063c661c1f94c7d9a268e0d3a681965,
title = "Anisotropic electrical transport in MgB2 single crystals",
abstract = "We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.",
author = "Yu Eltsev and K. Nakao and S. Lee and T. Masui and N. Chikumoto and S. Tajima and N. Koshizuka and Masato Murakami",
year = "2003",
month = "6",
doi = "10.1023/A:1023496909278",
language = "English",
volume = "131",
pages = "1069--1074",
journal = "Journal of Low Temperature Physics",
issn = "0022-2291",
publisher = "Springer New York",
number = "5-6",

}

TY - JOUR

T1 - Anisotropic electrical transport in MgB2 single crystals

AU - Eltsev, Yu

AU - Nakao, K.

AU - Lee, S.

AU - Masui, T.

AU - Chikumoto, N.

AU - Tajima, S.

AU - Koshizuka, N.

AU - Murakami, Masato

PY - 2003/6

Y1 - 2003/6

N2 - We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

AB - We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

UR - http://www.scopus.com/inward/record.url?scp=0037934352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037934352&partnerID=8YFLogxK

U2 - 10.1023/A:1023496909278

DO - 10.1023/A:1023496909278

M3 - Article

VL - 131

SP - 1069

EP - 1074

JO - Journal of Low Temperature Physics

JF - Journal of Low Temperature Physics

SN - 0022-2291

IS - 5-6

ER -