Anisotropic electrical transport in MgB2 single crystals

Yu Eltsev; K. Nakao; S. Lee; T. Masui; N. Chikumoto; S. Tajima; N. Koshizuka; M. Murakami

doi:10.1023/A:1023496909278

Anisotropic electrical transport in MgB₂ single crystals

Yu Eltsev, K. Nakao, S. Lee, T. Masui, N. Chikumoto, S. Tajima, N. Koshizuka, M. Murakami

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on study of transport properties of MgB₂ single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below T_c, the in-plane as well as the out-of-plane Hall resistivity, ρ_xy and ρ_zx, display no sign change anomaly. Furthermore, both ρ_xy and ρ_zx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

Original language	English
Pages (from-to)	1069-1073
Number of pages	5
Journal	Journal of Low Temperature Physics
Volume	131
Issue number	5-6
DOIs	https://doi.org/10.1023/A:1023496909278
Publication status	Published - 2003 Jun
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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title = "Anisotropic electrical transport in MgB2 single crystals",

abstract = "We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.",

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T1 - Anisotropic electrical transport in MgB2 single crystals

AU - Eltsev, Yu

AU - Nakao, K.

AU - Lee, S.

AU - Masui, T.

AU - Chikumoto, N.

AU - Tajima, S.

AU - Koshizuka, N.

AU - Murakami, M.

PY - 2003/6

Y1 - 2003/6

N2 - We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

AB - We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρc/ρab = 3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β = 1.5.

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Anisotropic electrical transport in MgB₂ single crystals

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