Anisotropic resistivity and hall effect in MgB2 single crystals

Yu Eltsev, K. Nakao, S. Lee, T. Masui, N. Chikumoto, S. Tajima, N. Koshizuka, M. Murakami

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report resistivity and the Hall-effect measurements in the normal and superconducting states of MgB2 single crystals. The resistivity has been found to be anisotropic with slightly temperature-dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets, is negative in contrast to the holelike Hall response with a field directed along the c axis, indicating presence of both types of charge carriers and, thus, the multiband electronic structure of MgB2. The Hall effect in the mixed state shows no sign change anomaly, reproducing Hall-effect behavior in clean limit type-II superconductors.

Original languageEnglish
Article number180504
Pages (from-to)1805041-1805044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number18
Publication statusPublished - 2002 Nov 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Eltsev, Y., Nakao, K., Lee, S., Masui, T., Chikumoto, N., Tajima, S., Koshizuka, N., & Murakami, M. (2002). Anisotropic resistivity and hall effect in MgB2 single crystals. Physical Review B - Condensed Matter and Materials Physics, 66(18), 1805041-1805044. [180504].