Anisotropic resistivity and hall effect in MgB2 single crystals

Yu Eltsev, K. Nakao, S. Lee, T. Masui, N. Chikumoto, S. Tajima, N. Koshizuka, Masato Murakami

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Abstract

We report resistivity and the Hall-effect measurements in the normal and superconducting states of MgB2 single crystals. The resistivity has been found to be anisotropic with slightly temperature-dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets, is negative in contrast to the holelike Hall response with a field directed along the c axis, indicating presence of both types of charge carriers and, thus, the multiband electronic structure of MgB2. The Hall effect in the mixed state shows no sign change anomaly, reproducing Hall-effect behavior in clean limit type-II superconductors.

Original languageEnglish
Article number180504
Pages (from-to)1805041-1805044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number18
Publication statusPublished - 2002 Nov 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Eltsev, Y., Nakao, K., Lee, S., Masui, T., Chikumoto, N., Tajima, S., ... Murakami, M. (2002). Anisotropic resistivity and hall effect in MgB2 single crystals. Physical Review B - Condensed Matter and Materials Physics, 66(18), 1805041-1805044. [180504].