Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence

Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report experimental data on photoluminescence (PL) annealing of metalorganic chemical vapor deposition (MOCVD) grown GaN-InGaN multi quantum wells (MQWs). The formation of phase separation in the InGaN quantum well layer was confirmed by PL mapping when the MQW was grown at 6757°C. Spatial distribution of the yellow (Y)-band PL correlated with the dislocation network in that the intensity of the PL was lowest at the grain boundaries. The activation energy of thermal quenching of the InGaN PL at 400 nm was found to be equal to that of the increase of Y-band PL at 550 nm. The origin of the Y-band is explained as a radiative donor-acceptor recombination.

Original languageEnglish
Pages (from-to)393-396
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number2 A
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Photoluminescence
Energy gap
quantum wells
Annealing
photoluminescence
annealing
Metallorganic chemical vapor deposition
Phase separation
Spatial distribution
metalorganic chemical vapor deposition
Quenching
spatial distribution
Grain boundaries
grain boundaries
Activation energy
quenching
activation energy

Keywords

  • Defects
  • Gallium nitride
  • Multi quantum wells
  • Photoluminescence
  • Recombination

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Annealing of GaN-InGaN multi quantum wells : Correlation between the bandgap and yellow photoluminescence. / Juodkazis, Saulius; Eliseev, Petr G.; Watanabe, Mitsuru; Sun, Hong Bo; Matsuo, Shigeki; Sugahara, Tomoya; Sakai, Shiro; Misawa, Hiroaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 2 A, 2000, p. 393-396.

Research output: Contribution to journalArticle

Juodkazis, Saulius ; Eliseev, Petr G. ; Watanabe, Mitsuru ; Sun, Hong Bo ; Matsuo, Shigeki ; Sugahara, Tomoya ; Sakai, Shiro ; Misawa, Hiroaki. / Annealing of GaN-InGaN multi quantum wells : Correlation between the bandgap and yellow photoluminescence. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2000 ; Vol. 39, No. 2 A. pp. 393-396.
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AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Sugahara, Tomoya

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