Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence

Saulius Juodkazis; Petr G. Eliseev; Mitsuru Watanabe; Hong Bo Sun; Shigeki Matsuo; Tomoya Sugahara; Shiro Sakai; Hiroaki Misawa

doi:10.1143/jjap.39.393

Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence

Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report experimental data on photoluminescence (PL) annealing of metalorganic chemical vapor deposition (MOCVD) grown GaN-InGaN multi quantum wells (MQWs). The formation of phase separation in the InGaN quantum well layer was confirmed by PL mapping when the MQW was grown at 6757°C. Spatial distribution of the yellow (Y)-band PL correlated with the dislocation network in that the intensity of the PL was lowest at the grain boundaries. The activation energy of thermal quenching of the InGaN PL at 400 nm was found to be equal to that of the increase of Y-band PL at 550 nm. The origin of the Y-band is explained as a radiative donor-acceptor recombination.

Original language	English
Pages (from-to)	393-396
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	2 A
DOIs	https://doi.org/10.1143/jjap.39.393
Publication status	Published - 2000
Externally published	Yes

Keywords

Defects
Gallium nitride
Multi quantum wells
Photoluminescence
Recombination

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.39.393

Cite this

Annealing of GaN-InGaN multi quantum wells : Correlation between the bandgap and yellow photoluminescence. / Juodkazis, Saulius; Eliseev, Petr G.; Watanabe, Mitsuru et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 2 A, 2000, p. 393-396.

Research output: Contribution to journal › Article › peer-review

@article{f200ab3c4c1143ee9ee0f6ba98c389f2,

title = "Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence",

abstract = "We report experimental data on photoluminescence (PL) annealing of metalorganic chemical vapor deposition (MOCVD) grown GaN-InGaN multi quantum wells (MQWs). The formation of phase separation in the InGaN quantum well layer was confirmed by PL mapping when the MQW was grown at 6757°C. Spatial distribution of the yellow (Y)-band PL correlated with the dislocation network in that the intensity of the PL was lowest at the grain boundaries. The activation energy of thermal quenching of the InGaN PL at 400 nm was found to be equal to that of the increase of Y-band PL at 550 nm. The origin of the Y-band is explained as a radiative donor-acceptor recombination.",

keywords = "Defects, Gallium nitride, Multi quantum wells, Photoluminescence, Recombination",

author = "Saulius Juodkazis and Eliseev, {Petr G.} and Mitsuru Watanabe and Sun, {Hong Bo} and Shigeki Matsuo and Tomoya Sugahara and Shiro Sakai and Hiroaki Misawa",

year = "2000",

doi = "10.1143/jjap.39.393",

language = "English",

volume = "39",

pages = "393--396",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2 A",

}

TY - JOUR

T1 - Annealing of GaN-InGaN multi quantum wells

T2 - Correlation between the bandgap and yellow photoluminescence

AU - Juodkazis, Saulius

AU - Eliseev, Petr G.

AU - Watanabe, Mitsuru

AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Sugahara, Tomoya

AU - Sakai, Shiro

AU - Misawa, Hiroaki

PY - 2000

Y1 - 2000

N2 - We report experimental data on photoluminescence (PL) annealing of metalorganic chemical vapor deposition (MOCVD) grown GaN-InGaN multi quantum wells (MQWs). The formation of phase separation in the InGaN quantum well layer was confirmed by PL mapping when the MQW was grown at 6757°C. Spatial distribution of the yellow (Y)-band PL correlated with the dislocation network in that the intensity of the PL was lowest at the grain boundaries. The activation energy of thermal quenching of the InGaN PL at 400 nm was found to be equal to that of the increase of Y-band PL at 550 nm. The origin of the Y-band is explained as a radiative donor-acceptor recombination.

AB - We report experimental data on photoluminescence (PL) annealing of metalorganic chemical vapor deposition (MOCVD) grown GaN-InGaN multi quantum wells (MQWs). The formation of phase separation in the InGaN quantum well layer was confirmed by PL mapping when the MQW was grown at 6757°C. Spatial distribution of the yellow (Y)-band PL correlated with the dislocation network in that the intensity of the PL was lowest at the grain boundaries. The activation energy of thermal quenching of the InGaN PL at 400 nm was found to be equal to that of the increase of Y-band PL at 550 nm. The origin of the Y-band is explained as a radiative donor-acceptor recombination.

KW - Defects

KW - Gallium nitride

KW - Multi quantum wells

KW - Photoluminescence

KW - Recombination

UR - http://www.scopus.com/inward/record.url?scp=0033903776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033903776&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.393

DO - 10.1143/jjap.39.393

M3 - Article

AN - SCOPUS:0033903776

SN - 0021-4922

VL - 39

SP - 393

EP - 396

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 2 A

ER -

Annealing of GaN-InGaN multi quantum wells: Correlation between the bandgap and yellow photoluminescence

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this