Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, Hiroyasu Ishikawa, T. Egawa, C. L. Shao, T. Jimbo

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

Original languageEnglish
Pages (from-to)4702-4704
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number26
DOIs
Publication statusPublished - 2003 Jun 30
Externally publishedYes

Fingerprint

pulling
metalorganic chemical vapor deposition
quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells. / Hao, M.; Ishikawa, Hiroyasu; Egawa, T.; Shao, C. L.; Jimbo, T.

In: Applied Physics Letters, Vol. 82, No. 26, 30.06.2003, p. 4702-4704.

Research output: Contribution to journalArticle

Hao, M. ; Ishikawa, Hiroyasu ; Egawa, T. ; Shao, C. L. ; Jimbo, T. / Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells. In: Applied Physics Letters. 2003 ; Vol. 82, No. 26. pp. 4702-4704.
@article{060cb96564044382913d833e8efc0756,
title = "Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells",
abstract = "Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.",
author = "M. Hao and Hiroyasu Ishikawa and T. Egawa and Shao, {C. L.} and T. Jimbo",
year = "2003",
month = "6",
day = "30",
doi = "10.1063/1.1588731",
language = "English",
volume = "82",
pages = "4702--4704",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

TY - JOUR

T1 - Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

AU - Hao, M.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

AU - Shao, C. L.

AU - Jimbo, T.

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

AB - Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

UR - http://www.scopus.com/inward/record.url?scp=0037767839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037767839&partnerID=8YFLogxK

U2 - 10.1063/1.1588731

DO - 10.1063/1.1588731

M3 - Article

VL - 82

SP - 4702

EP - 4704

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -