Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, Hiroyasu Ishikawa, T. Egawa, C. L. Shao, T. Jimbo

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Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

Original languageEnglish
Pages (from-to)4702-4704
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2003 Jun 30
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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