An asymmetric LDD sidewall spacer technology is presented which gives a high drivability of LDD MOSFET without sacrificing hot carrier immunity. The asymmetric spacer is fabricated by using a selective oxide deposition technique. The process implemented in a CMOS fabrication sequence requires no additional masking step. The fact that no reliability problems are introduced in the transistor characteristics by the selective oxide deposition process is also examined.
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1994 Feb 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering