Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Hao Jiang, Naoyuki Nakata, Guang Yuan Zhao, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.

Original languageEnglish
Pages (from-to)L505-L507
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number5 B
Publication statusPublished - 2001 May 15

Keywords

  • Dark current
  • GaN
  • Internal gain
  • MSM-PD
  • Responsivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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  • Cite this

    Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T., & Umeno, M. (2001). Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain. Japanese Journal of Applied Physics, Part 2: Letters, 40(5 B), L505-L507.