Abstract
Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 40 |
| Issue number | 5 B |
| Publication status | Published - 2001 May 15 |
| Externally published | Yes |
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Keywords
- Dark current
- GaN
- Internal gain
- MSM-PD
- Responsivity
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain. / Jiang, Hao; Nakata, Naoyuki; Zhao, Guang Yuan; Ishikawa, Hiroyasu; Shao, Chun Lin; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 5 B, 15.05.2001.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain
AU - Jiang, Hao
AU - Nakata, Naoyuki
AU - Zhao, Guang Yuan
AU - Ishikawa, Hiroyasu
AU - Shao, Chun Lin
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 2001/5/15
Y1 - 2001/5/15
N2 - Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.
AB - Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.
KW - Dark current
KW - GaN
KW - Internal gain
KW - MSM-PD
KW - Responsivity
UR - http://www.scopus.com/inward/record.url?scp=0035872509&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035872509&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035872509
VL - 40
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -