Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Hao Jiang; Naoyuki Nakata; Guang Yuan Zhao; Hiroyasu Ishikawa; Chun Lin Shao; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

doi:10.1143/jjap.40.l505

Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Hao Jiang, Naoyuki Nakata, Guang Yuan Zhao, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm² irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.

Original language	English
Pages (from-to)	L505-L507
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.40.l505
Publication status	Published - 2001 May 15
Externally published	Yes

Keywords

Dark current
GaN
Internal gain
MSM-PD
Responsivity

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.l505

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Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain. / Jiang, Hao; Nakata, Naoyuki; Zhao, Guang Yuan; Ishikawa, Hiroyasu; Shao, Chun Lin; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 5 B, 15.05.2001, p. L505-L507.

Research output: Contribution to journal › Article › peer-review

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abstract = "Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.",

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AU - Jiang, Hao

AU - Nakata, Naoyuki

AU - Zhao, Guang Yuan

AU - Ishikawa, Hiroyasu

AU - Shao, Chun Lin

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

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N2 - Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.

AB - Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.

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