Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs

Kazushige Horio, Hiraku Onodera

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a backside electrode is performed by considering the use of a deep donor and a deep acceptor in a buffer layer. Effects of introducing the field plate and backside electrode on buffer-related current collapse are studied. It is shown that the introduction of field plate is effective in reducing current collapse when the acceptor density in the buffer layer is high. On the other hand, the introduction of backside electrode is shown to be effective in reducing current collapse when the acceptor density in the buffer layer is relatively low, because the fixed potential at the backside electrode reduces electron injection into the buffer layer and the resulting trapping effects.

Original languageEnglish
Pages (from-to)1655-1657
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number7
DOIs
Publication statusPublished - 2012 Jul

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high electron mobility transistors
buffers
electrodes
trapping
injection
electrons

Keywords

  • Buffer
  • Current collapse
  • GaN
  • HEMT
  • Trap
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs. / Horio, Kazushige; Onodera, Hiraku.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 7, 07.2012, p. 1655-1657.

Research output: Contribution to journalArticle

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