Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators

Yi Zhao; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1063/1.3075954

Band gap enhancement and electrical properties of La2 O3 films doped with Y₂ O₃ as high- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

In this study, we prepare the well crystallized La₂ O ₃ films by doping Y₂ O₃ with different contents (La2-x Yx O3) and examine the dielectric and electrical properties of La _2-x Yx O₃ films experimentally. It is found that the optical band gap of La_2-x Y_x O₃ film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/ cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/ La_2-x Y_x O₃ /Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/ La_2-x Y_x O₃ /Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.

Original language	English
Article number	042901
Journal	Applied Physics Letters
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.3075954
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3075954

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title = "Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators",

abstract = "In this study, we prepare the well crystallized La2 O 3 films by doping Y2 O3 with different contents (La2-x Yx O3) and examine the dielectric and electrical properties of La 2-x Yx O3 films experimentally. It is found that the optical band gap of La2-x Yx O3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/ cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/ La2-x Yx O3 /Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/ La2-x Yx O3 /Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.",

author = "Yi Zhao and Koji Kita and Kentaro Kyuno and Akira Toriumi",

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T1 - Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators

AU - Zhao, Yi

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

PY - 2009

Y1 - 2009

N2 - In this study, we prepare the well crystallized La2 O 3 films by doping Y2 O3 with different contents (La2-x Yx O3) and examine the dielectric and electrical properties of La 2-x Yx O3 films experimentally. It is found that the optical band gap of La2-x Yx O3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/ cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/ La2-x Yx O3 /Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/ La2-x Yx O3 /Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.

AB - In this study, we prepare the well crystallized La2 O 3 films by doping Y2 O3 with different contents (La2-x Yx O3) and examine the dielectric and electrical properties of La 2-x Yx O3 films experimentally. It is found that the optical band gap of La2-x Yx O3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/ cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/ La2-x Yx O3 /Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/ La2-x Yx O3 /Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.

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Band gap enhancement and electrical properties of La2 O3 films doped with Y₂ O₃ as high- k gate insulators

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