Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

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57 Citations (Scopus)


In this study, we prepare the well crystallized La2 O 3 films by doping Y2 O3 with different contents (La2-x Yx O3) and examine the dielectric and electrical properties of La 2-x Yx O3 films experimentally. It is found that the optical band gap of La2-x Yx O3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/ cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/ La2-x Yx O3 /Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/ La2-x Yx O3 /Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.

Original languageEnglish
Article number042901
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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