Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

In this study, we prepare the well crystallized La2 O 3 films by doping Y2 O3 with different contents (La2-x Yx O3) and examine the dielectric and electrical properties of La 2-x Yx O3 films experimentally. It is found that the optical band gap of La2-x Yx O3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/ cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/ La2-x Yx O3 /Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/ La2-x Yx O3 /Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.

Original languageEnglish
Article number042901
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009

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electrical properties
insulators
augmentation
capacitors
electric potential
leakage
capacitance-voltage characteristics
MIS (semiconductors)
metals
dielectric properties
capacitance
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators. / Zhao, Yi; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Applied Physics Letters, Vol. 94, No. 4, 042901, 2009.

Research output: Contribution to journalArticle

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