Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Y.Zhao Y.Zhao, K.Kita K.Kita, K.Kyuno K.Kyuno, A.Toriumi A.Toriumi, Kentaro Kyuno

Research output: Contribution to journal › Article › peer-review

Cite this

@article{a349f032a819429e93462c49370fce19,

title = "Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators",

author = "Y.Zhao Y.Zhao and K.Kita K.Kita and K.Kyuno K.Kyuno and A.Toriumi A.Toriumi and Kentaro Kyuno",

year = "2009",

month = apr,

day = "1",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}