Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Y.Zhao Y.Zhao, K.Kita K.Kita, K.Kyuno K.Kyuno, A.Toriumi A.Toriumi, Kentaro Kyuno

Research output: Contribution to journalArticle

Original languageEnglish
JournalApplied Physics Letters
Volume94
Publication statusPublished - 2009 Apr 1

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Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators. / Y.Zhao, Y.Zhao; K.Kita, K.Kita; K.Kyuno, K.Kyuno; A.Toriumi, A.Toriumi; Kyuno, Kentaro.

In: Applied Physics Letters, Vol. 94, 01.04.2009.

Research output: Contribution to journalArticle

Y.Zhao, Y.Zhao ; K.Kita, K.Kita ; K.Kyuno, K.Kyuno ; A.Toriumi, A.Toriumi ; Kyuno, Kentaro. / Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators. In: Applied Physics Letters. 2009 ; Vol. 94.
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