Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

Hao Jiang, Takashi Egawa, Hiroyasu Ishikawa, Yanbo Dou, Chunlin Shao, Takashi Jlmbo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A p+-GaN surface layer of 15 nm was incorporated in n-GaN Schottky photodiode to enhance the effective Schottky barrier height. A barrier height of 1.09eV for the normal n-GaN Schottky photodiode was increased to the effective barrier height of 1.16eV. The resulting photodiodes show a reverse dark current density of as low as 4.8 × 10-10 A/cm2 at -2V bias, which is about three orders of magnitude lower than that of the normal n-GaN Schottky photodiode. The lower dark current leads to a significant improvement in the visible rejection ratio. A peak responsivity of 107 mA/W was obtained at -2 V bias under the incident power density of 10μ,W/cm2, corresponding to an external quantum efficiency of 38%.

Original languageEnglish
Pages (from-to)4101-4104
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number7 A
DOIs
Publication statusPublished - 2004 Jul
Externally publishedYes

Fingerprint

Photodiodes
photodiodes
surface layers
Dark currents
dark current
Quantum efficiency
rejection
radiant flux density
quantum efficiency
Current density
current density

Keywords

  • GaN
  • Leakage current
  • Schottky barrier height
  • Schottky photodiode
  • UV photodetector

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer. / Jiang, Hao; Egawa, Takashi; Ishikawa, Hiroyasu; Dou, Yanbo; Shao, Chunlin; Jlmbo, Takashi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 7 A, 07.2004, p. 4101-4104.

Research output: Contribution to journalArticle

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AU - Egawa, Takashi

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AU - Shao, Chunlin

AU - Jlmbo, Takashi

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