Behavior of Cu-In-Te electrodeposition from acid solution

Takahiro Ishizaki, Nagahiro Saito, Daisuke Yata, Akio Fuwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

Original languageEnglish
Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages281-284
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA
Duration: 2000 Nov 52000 Nov 8

Other

OtherProceedings of the Second International Conference on Processing Materials for Properties
CitySan Francisco, CA
Period00/11/500/11/8

Fingerprint

Electrodeposition
Acids
Chemical analysis
Stoichiometry
Titanium
Semiconductor materials
Scanning electron microscopy
Substrates
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ishizaki, T., Saito, N., Yata, D., & Fuwa, A. (2000). Behavior of Cu-In-Te electrodeposition from acid solution. In B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (Eds.), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 281-284)

Behavior of Cu-In-Te electrodeposition from acid solution. / Ishizaki, Takahiro; Saito, Nagahiro; Yata, Daisuke; Fuwa, Akio.

Proceedings of the Second International Conference on Processing Materials for Properties. ed. / B. Mishra; C, Yamauchi; B. Mishra; C. Yamauchi. 2000. p. 281-284.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishizaki, T, Saito, N, Yata, D & Fuwa, A 2000, Behavior of Cu-In-Te electrodeposition from acid solution. in B Mishra, C Yamauchi, B Mishra & C Yamauchi (eds), Proceedings of the Second International Conference on Processing Materials for Properties. pp. 281-284, Proceedings of the Second International Conference on Processing Materials for Properties, San Francisco, CA, 00/11/5.
Ishizaki T, Saito N, Yata D, Fuwa A. Behavior of Cu-In-Te electrodeposition from acid solution. In Mishra B, Yamauchi C, Mishra B, Yamauchi C, editors, Proceedings of the Second International Conference on Processing Materials for Properties. 2000. p. 281-284
Ishizaki, Takahiro ; Saito, Nagahiro ; Yata, Daisuke ; Fuwa, Akio. / Behavior of Cu-In-Te electrodeposition from acid solution. Proceedings of the Second International Conference on Processing Materials for Properties. editor / B. Mishra ; C, Yamauchi ; B. Mishra ; C. Yamauchi. 2000. pp. 281-284
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