Bonding of GaN with Si using SeS2 and Laser Lift-off

J. Arokiaraj, H. Ishikawa, T. Soga, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)MA4-3
JournalDefault journal
Publication statusPublished - 2000 Sep 1

Cite this

Arokiaraj, J., Ishikawa, H., Soga, T., Egawa, T., Jimbo, T., & Umeno, M. (2000). Bonding of GaN with Si using SeS2 and Laser Lift-off. Default journal, MA4-3.

Bonding of GaN with Si using SeS2 and Laser Lift-off. / Arokiaraj, J.; Ishikawa, H.; Soga, T.; Egawa, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.2000, p. MA4-3.

Research output: Contribution to journalArticle

Arokiaraj, J, Ishikawa, H, Soga, T, Egawa, T, Jimbo, T & Umeno, M 2000, 'Bonding of GaN with Si using SeS2 and Laser Lift-off', Default journal, pp. MA4-3.
Arokiaraj J, Ishikawa H, Soga T, Egawa T, Jimbo T, Umeno M. Bonding of GaN with Si using SeS2 and Laser Lift-off. Default journal. 2000 Sep 1;MA4-3.
Arokiaraj, J. ; Ishikawa, H. ; Soga, T. ; Egawa, T. ; Jimbo, T. ; Umeno, M. / Bonding of GaN with Si using SeS2 and Laser Lift-off. In: Default journal. 2000 ; pp. MA4-3.
@article{cbd61158719a4856bf9ffd1d9f9584f4,
title = "Bonding of GaN with Si using SeS2 and Laser Lift-off",
author = "J. Arokiaraj and H. Ishikawa and T. Soga and T. Egawa and T. Jimbo and M. Umeno",
year = "2000",
month = "9",
day = "1",
language = "English",
pages = "MA4--3",
journal = "Default journal",

}

TY - JOUR

T1 - Bonding of GaN with Si using SeS2 and Laser Lift-off

AU - Arokiaraj, J.

AU - Ishikawa, H.

AU - Soga, T.

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2000/9/1

Y1 - 2000/9/1

M3 - Article

SP - MA4-3

JO - Default journal

JF - Default journal

ER -