Bonding of GaN with Si using SeS2 and Laser Lift-off

J. Arokiaraj, H. Ishikawa, T. Soga, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article

Original languageEnglish
Pages (from-to)MA4-3
JournalDefault journal
Publication statusPublished - 2000 Sep 1

Cite this

Arokiaraj, J., Ishikawa, H., Soga, T., Egawa, T., Jimbo, T., & Umeno, M. (2000). Bonding of GaN with Si using SeS2 and Laser Lift-off. Default journal, MA4-3.

Bonding of GaN with Si using SeS2 and Laser Lift-off. / Arokiaraj, J.; Ishikawa, H.; Soga, T.; Egawa, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.2000, p. MA4-3.

Research output: Contribution to journal › Article

Arokiaraj, J, Ishikawa, H, Soga, T, Egawa, T, Jimbo, T & Umeno, M 2000, 'Bonding of GaN with Si using SeS2 and Laser Lift-off', Default journal, pp. MA4-3.
Arokiaraj J, Ishikawa H, Soga T, Egawa T, Jimbo T, Umeno M. Bonding of GaN with Si using SeS2 and Laser Lift-off. Default journal. 2000 Sep 1;MA4-3.
Arokiaraj, J. ; Ishikawa, H. ; Soga, T. ; Egawa, T. ; Jimbo, T. ; Umeno, M. / Bonding of GaN with Si using SeS2 and Laser Lift-off. In: Default journal. 2000 ; pp. MA4-3.
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AU - Jimbo, T.

AU - Umeno, M.

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