Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

T. Ohshima, M. Deki, T. Makino, N. Iwamoto, S. Onoda, T. Hirao, K. Kojima, T. Tomita, Shigeki Matsuo, S. Hashimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H silicon carbide (SiC) were irradiated with heavy ions at energies of up to 454 MeV. The currents observed through the gate oxide of the MOS capacitors were monitored under biased conditions during ion irradiation. Under ion irradiation, the dielectric breakdown was observed at lower electric fields compared to the case under non-irradiation condition. The value of the electric field, at which the dielectric breakdown was obtained, decreased with increasing linear energy transfer (LET) of the incident ions.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages654-658
Number of pages5
Volume1525
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event22nd International Conference on the Application of Accelerators in Research and Industry, CAARI 2012 - Fort Worth, TX
Duration: 2012 Aug 52012 Aug 10

Other

Other22nd International Conference on the Application of Accelerators in Research and Industry, CAARI 2012
CityFort Worth, TX
Period12/8/512/8/10

Fingerprint

ion irradiation
semiconductor devices
electrical faults
metal oxide semiconductors
silicon carbides
capacitors
breakdown
ion beams
linear energy transfer (LET)
electric fields
heavy ions
oxides
ions
energy

Keywords

  • Heavy Ions
  • Metal-Oxide-Semiconductor (MOS)
  • Silicon Carbide (SiC)
  • Single Event Gate Rupture

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ohshima, T., Deki, M., Makino, T., Iwamoto, N., Onoda, S., Hirao, T., ... Hashimoto, S. (2013). Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams. In AIP Conference Proceedings (Vol. 1525, pp. 654-658) https://doi.org/10.1063/1.4802408

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams. / Ohshima, T.; Deki, M.; Makino, T.; Iwamoto, N.; Onoda, S.; Hirao, T.; Kojima, K.; Tomita, T.; Matsuo, Shigeki; Hashimoto, S.

AIP Conference Proceedings. Vol. 1525 2013. p. 654-658.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohshima, T, Deki, M, Makino, T, Iwamoto, N, Onoda, S, Hirao, T, Kojima, K, Tomita, T, Matsuo, S & Hashimoto, S 2013, Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams. in AIP Conference Proceedings. vol. 1525, pp. 654-658, 22nd International Conference on the Application of Accelerators in Research and Industry, CAARI 2012, Fort Worth, TX, 12/8/5. https://doi.org/10.1063/1.4802408
Ohshima T, Deki M, Makino T, Iwamoto N, Onoda S, Hirao T et al. Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams. In AIP Conference Proceedings. Vol. 1525. 2013. p. 654-658 https://doi.org/10.1063/1.4802408
Ohshima, T. ; Deki, M. ; Makino, T. ; Iwamoto, N. ; Onoda, S. ; Hirao, T. ; Kojima, K. ; Tomita, T. ; Matsuo, Shigeki ; Hashimoto, S. / Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams. AIP Conference Proceedings. Vol. 1525 2013. pp. 654-658
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