Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

T. Ohshima, M. Deki, T. Makino, N. Iwamoto, S. Onoda, T. Hirao, K. Kojima, T. Tomita, S. Matsuo, S. Hashimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H silicon carbide (SiC) were irradiated with heavy ions at energies of up to 454 MeV. The currents observed through the gate oxide of the MOS capacitors were monitored under biased conditions during ion irradiation. Under ion irradiation, the dielectric breakdown was observed at lower electric fields compared to the case under non-irradiation condition. The value of the electric field, at which the dielectric breakdown was obtained, decreased with increasing linear energy transfer (LET) of the incident ions.

Original languageEnglish
Title of host publicationApplication of Accelerators in Research and Industry - Twenty-Second International Conference
Pages654-658
Number of pages5
DOIs
Publication statusPublished - 2013 May 20
Event22nd International Conference on the Application of Accelerators in Research and Industry, CAARI 2012 - Fort Worth, TX, United States
Duration: 2012 Aug 52012 Aug 10

Publication series

NameAIP Conference Proceedings
Volume1525
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference22nd International Conference on the Application of Accelerators in Research and Industry, CAARI 2012
CountryUnited States
CityFort Worth, TX
Period12/8/512/8/10

Keywords

  • Heavy Ions
  • Metal-Oxide-Semiconductor (MOS)
  • Silicon Carbide (SiC)
  • Single Event Gate Rupture

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Ohshima, T., Deki, M., Makino, T., Iwamoto, N., Onoda, S., Hirao, T., Kojima, K., Tomita, T., Matsuo, S., & Hashimoto, S. (2013). Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams. In Application of Accelerators in Research and Industry - Twenty-Second International Conference (pp. 654-658). (AIP Conference Proceedings; Vol. 1525). https://doi.org/10.1063/1.4802408