Bromine doping of multilayer graphene for low-resistance interconnects

Kazuyoshi Ueno, Ryosuke Kosugi, Kazuya Imazeki, Akihiko Aozasa, Yuji Matsumoto, Hisao Miyazaki, Naoshi Sakuma, Akihiro Kajita, Tadashi Sakai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. To achieve low-resistance interconnect with MLG, carrier doping is necessary since the carrier concentrations in pristine MLGs are low. In this work, the effects of bromine (Br) doping by intercalation on the carrier concentration and sheet resistance of exfoliated highly oriented pyrolytic graphite (HOPG) were investigated by measuring the Fermi level shift using ultraviolet photoelectron spectroscopy (UPS) and the fourterminal method, respectively. The Fermi level was shifted downward up to 0.63 eV, and the sheet resistance was reduced to less than 10% of that of the pristine HOPG by increasing the Br concentration. A similar Fermi level shift was observed for the commercially available CVD-MLG. Br doping is thus promising for low-resistance MLG interconnects from the perspective of carrier doping.

Original languageEnglish
Article number05GC02
JournalJapanese Journal of Applied Physics
Volume53
Issue number5 SPEC. ISSUE 2
DOIs
Publication statusPublished - 2014

Fingerprint

Bromine
low resistance
bromine
Graphene
graphene
Multilayers
Fermi level
Doping (additives)
pyrolytic graphite
Sheet resistance
Carrier concentration
Graphite
Ultraviolet photoelectron spectroscopy
shift
ultraviolet spectroscopy
Intercalation
intercalation
Chemical vapor deposition
photoelectron spectroscopy
vapor deposition

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ueno, K., Kosugi, R., Imazeki, K., Aozasa, A., Matsumoto, Y., Miyazaki, H., ... Sakai, T. (2014). Bromine doping of multilayer graphene for low-resistance interconnects. Japanese Journal of Applied Physics, 53(5 SPEC. ISSUE 2), [05GC02]. https://doi.org/10.7567/JJAP.53.05GC02

Bromine doping of multilayer graphene for low-resistance interconnects. / Ueno, Kazuyoshi; Kosugi, Ryosuke; Imazeki, Kazuya; Aozasa, Akihiko; Matsumoto, Yuji; Miyazaki, Hisao; Sakuma, Naoshi; Kajita, Akihiro; Sakai, Tadashi.

In: Japanese Journal of Applied Physics, Vol. 53, No. 5 SPEC. ISSUE 2, 05GC02, 2014.

Research output: Contribution to journalArticle

Ueno, K, Kosugi, R, Imazeki, K, Aozasa, A, Matsumoto, Y, Miyazaki, H, Sakuma, N, Kajita, A & Sakai, T 2014, 'Bromine doping of multilayer graphene for low-resistance interconnects', Japanese Journal of Applied Physics, vol. 53, no. 5 SPEC. ISSUE 2, 05GC02. https://doi.org/10.7567/JJAP.53.05GC02
Ueno K, Kosugi R, Imazeki K, Aozasa A, Matsumoto Y, Miyazaki H et al. Bromine doping of multilayer graphene for low-resistance interconnects. Japanese Journal of Applied Physics. 2014;53(5 SPEC. ISSUE 2). 05GC02. https://doi.org/10.7567/JJAP.53.05GC02
Ueno, Kazuyoshi ; Kosugi, Ryosuke ; Imazeki, Kazuya ; Aozasa, Akihiko ; Matsumoto, Yuji ; Miyazaki, Hisao ; Sakuma, Naoshi ; Kajita, Akihiro ; Sakai, Tadashi. / Bromine doping of multilayer graphene for low-resistance interconnects. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 5 SPEC. ISSUE 2.
@article{377b0ce69f7741a5b6f7c91960c3be39,
title = "Bromine doping of multilayer graphene for low-resistance interconnects",
abstract = "Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. To achieve low-resistance interconnect with MLG, carrier doping is necessary since the carrier concentrations in pristine MLGs are low. In this work, the effects of bromine (Br) doping by intercalation on the carrier concentration and sheet resistance of exfoliated highly oriented pyrolytic graphite (HOPG) were investigated by measuring the Fermi level shift using ultraviolet photoelectron spectroscopy (UPS) and the fourterminal method, respectively. The Fermi level was shifted downward up to 0.63 eV, and the sheet resistance was reduced to less than 10{\%} of that of the pristine HOPG by increasing the Br concentration. A similar Fermi level shift was observed for the commercially available CVD-MLG. Br doping is thus promising for low-resistance MLG interconnects from the perspective of carrier doping.",
author = "Kazuyoshi Ueno and Ryosuke Kosugi and Kazuya Imazeki and Akihiko Aozasa and Yuji Matsumoto and Hisao Miyazaki and Naoshi Sakuma and Akihiro Kajita and Tadashi Sakai",
year = "2014",
doi = "10.7567/JJAP.53.05GC02",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 SPEC. ISSUE 2",

}

TY - JOUR

T1 - Bromine doping of multilayer graphene for low-resistance interconnects

AU - Ueno, Kazuyoshi

AU - Kosugi, Ryosuke

AU - Imazeki, Kazuya

AU - Aozasa, Akihiko

AU - Matsumoto, Yuji

AU - Miyazaki, Hisao

AU - Sakuma, Naoshi

AU - Kajita, Akihiro

AU - Sakai, Tadashi

PY - 2014

Y1 - 2014

N2 - Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. To achieve low-resistance interconnect with MLG, carrier doping is necessary since the carrier concentrations in pristine MLGs are low. In this work, the effects of bromine (Br) doping by intercalation on the carrier concentration and sheet resistance of exfoliated highly oriented pyrolytic graphite (HOPG) were investigated by measuring the Fermi level shift using ultraviolet photoelectron spectroscopy (UPS) and the fourterminal method, respectively. The Fermi level was shifted downward up to 0.63 eV, and the sheet resistance was reduced to less than 10% of that of the pristine HOPG by increasing the Br concentration. A similar Fermi level shift was observed for the commercially available CVD-MLG. Br doping is thus promising for low-resistance MLG interconnects from the perspective of carrier doping.

AB - Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. To achieve low-resistance interconnect with MLG, carrier doping is necessary since the carrier concentrations in pristine MLGs are low. In this work, the effects of bromine (Br) doping by intercalation on the carrier concentration and sheet resistance of exfoliated highly oriented pyrolytic graphite (HOPG) were investigated by measuring the Fermi level shift using ultraviolet photoelectron spectroscopy (UPS) and the fourterminal method, respectively. The Fermi level was shifted downward up to 0.63 eV, and the sheet resistance was reduced to less than 10% of that of the pristine HOPG by increasing the Br concentration. A similar Fermi level shift was observed for the commercially available CVD-MLG. Br doping is thus promising for low-resistance MLG interconnects from the perspective of carrier doping.

UR - http://www.scopus.com/inward/record.url?scp=84903305342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903305342&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.05GC02

DO - 10.7567/JJAP.53.05GC02

M3 - Article

AN - SCOPUS:84903305342

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 SPEC. ISSUE 2

M1 - 05GC02

ER -