Buffer-related gate lag in AlGaN/GaN HEMTs

Atsushi Nakajima, Kunitaka Fujii, Kazushige Horio

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.

Original languageEnglish
Pages (from-to)1658-1660
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number7
DOIs
Publication statusPublished - 2012 Jul

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high electron mobility transistors
time lag
buffers
traps
dimensional analysis
energy levels

Keywords

  • Buffer
  • GaN
  • Gate lag
  • HEMT
  • Trap
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Buffer-related gate lag in AlGaN/GaN HEMTs. / Nakajima, Atsushi; Fujii, Kunitaka; Horio, Kazushige.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 7, 07.2012, p. 1658-1660.

Research output: Contribution to journalArticle

Nakajima, Atsushi ; Fujii, Kunitaka ; Horio, Kazushige. / Buffer-related gate lag in AlGaN/GaN HEMTs. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2012 ; Vol. 9, No. 7. pp. 1658-1660.
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