Buffer-trapping effects on current slump in AlGaN/GaN HEMTs

Atsushi Nakajima, Kazushige Horio

Research output: Contribution to journalArticle

Abstract

Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Calculated transient characteristics are compared between the two FETs, and it is shown that the deep levels affect the results essentially in a similar way. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original languageEnglish
Pages (from-to)735-739
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume19
Issue number8-9
DOIs
Publication statusPublished - 2008 Sep 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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