Cavity less GaAs CW sub-THz TUNNETT oscillators

B. Sundararajan; Kazuomi Endo; Tadao Tanabe; Yutaka Oyama; Piotr Plotka; Jun Ichi Nishizawa

doi:10.1109/ICIMW.2009.5324720

Cavity less GaAs CW sub-THz TUNNETT oscillators

B. Sundararajan, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama, Piotr Plotka, Jun Ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)

Original language	English
Title of host publication	34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
DOIs	https://doi.org/10.1109/ICIMW.2009.5324720
Publication status	Published - 2009
Externally published	Yes
Event	34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009 - Busan, Korea, Republic of Duration: 2009 Sept 21 → 2009 Sept 25

Publication series

Name	34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009

Conference

Conference	34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
Country/Territory	Korea, Republic of
City	Busan
Period	09/9/21 → 09/9/25

ASJC Scopus subject areas

Electrical and Electronic Engineering
Communication

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10.1109/ICIMW.2009.5324720

Cite this

Sundararajan, B., Endo, K., Tanabe, T., Oyama, Y., Plotka, P., & Nishizawa, J. I. (2009). Cavity less GaAs CW sub-THz TUNNETT oscillators. In 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009 [5324720] (34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009). https://doi.org/10.1109/ICIMW.2009.5324720

Cavity less GaAs CW sub-THz TUNNETT oscillators. / Sundararajan, B.; Endo, Kazuomi; Tanabe, Tadao et al.

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009. 2009. 5324720 (34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sundararajan, B, Endo, K, Tanabe, T, Oyama, Y, Plotka, P & Nishizawa, JI 2009, Cavity less GaAs CW sub-THz TUNNETT oscillators. in 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009., 5324720, 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Busan, Korea, Republic of, 09/9/21. https://doi.org/10.1109/ICIMW.2009.5324720

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abstract = "Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)",

author = "B. Sundararajan and Kazuomi Endo and Tadao Tanabe and Yutaka Oyama and Piotr Plotka and Nishizawa, {Jun Ichi}",

year = "2009",

doi = "10.1109/ICIMW.2009.5324720",

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AU - Sundararajan, B.

AU - Endo, Kazuomi

AU - Tanabe, Tadao

AU - Oyama, Yutaka

AU - Plotka, Piotr

AU - Nishizawa, Jun Ichi

PY - 2009

Y1 - 2009

N2 - Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)

AB - Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)

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U2 - 10.1109/ICIMW.2009.5324720

DO - 10.1109/ICIMW.2009.5324720

M3 - Conference contribution

AN - SCOPUS:72749117635

SN - 9781424454174

T3 - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009

BT - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009

T2 - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009

Y2 - 21 September 2009 through 25 September 2009

ER -

Cavity less GaAs CW sub-THz TUNNETT oscillators

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